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BSC070N10NS3G
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSC070N10NS3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| RDS(on) | 7mΩ@10V,50A |
| DraintoSourceVoltage | 100V |
| Pd-PowerDissipation | 114W |
| Current-ContinuousDrain(Id) | 90A |
| GateThresholdVoltage(Vgs(th)@Id) | 3.5V |
| Number | 1 N-channel |
Visão Geral
Description
BSC070N10NS3G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high efficiency and low power loss. It is part of the BSC series produced by Infineon Technologies and is optimized for a variety of switching applications, such as power management and motor control.
Key features include a low on-resistance (R_DS(on)), which enhances performance by reducing heat generation during operation. The BSC070N10NS3G can handle high drain current and has a maximum drain-source voltage (V_DS) of 100V. Its fast switching capabilities make it suitable for high-frequency applications.
This MOSFET is typically housed in a TO-220 package, providing good thermal performance and ease of mounting. Overall, the BSC070N10NS3G is ideal for designers looking for reliable, efficient power switching solutions in various electronic circuits.
Key features include a low on-resistance (R_DS(on)), which enhances performance by reducing heat generation during operation. The BSC070N10NS3G can handle high drain current and has a maximum drain-source voltage (V_DS) of 100V. Its fast switching capabilities make it suitable for high-frequency applications.
This MOSFET is typically housed in a TO-220 package, providing good thermal performance and ease of mounting. Overall, the BSC070N10NS3G is ideal for designers looking for reliable, efficient power switching solutions in various electronic circuits.
Equivalent
The BSC070N10NS3G is an N-channel MOSFET. Equivalent products include:
1. IRF140
2. STP75NF10
3. FDB7030
4. SI7460DP
5. PMV20UN
Always check specifications such as voltage, current ratings, RDS(on), and package type to ensure compatibility for your specific application.
1. IRF140
2. STP75NF10
3. FDB7030
4. SI7460DP
5. PMV20UN
Always check specifications such as voltage, current ratings, RDS(on), and package type to ensure compatibility for your specific application.
Features
The BSC070N10NS3G is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 70A, allowing efficient power handling.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)), typically around 10 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, facilitating easy driving with standard gate voltages.
5. Package Type: The device is available in a DPAK package, providing good thermal performance and ease of mounting.
6. Fast Switching: It features fast switching capabilities, making it ideal for applications such as switching power supplies, motor drivers, and other high-frequency applications.
7. Thermal Performance: With a robust thermal resistance, it efficiently dissipates heat, enhancing reliability in demanding environments.
These features make the BSC070N10NS3G a versatile choice for electronic design engineers.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 70A, allowing efficient power handling.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)), typically around 10 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, facilitating easy driving with standard gate voltages.
5. Package Type: The device is available in a DPAK package, providing good thermal performance and ease of mounting.
6. Fast Switching: It features fast switching capabilities, making it ideal for applications such as switching power supplies, motor drivers, and other high-frequency applications.
7. Thermal Performance: With a robust thermal resistance, it efficiently dissipates heat, enhancing reliability in demanding environments.
These features make the BSC070N10NS3G a versatile choice for electronic design engineers.
Pinout
The BSC070N10NS3G is an N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's operation; applies voltage to turn the device on or off.
2. Drain (D): The terminal through which the main current flows out; it connects to the load.
3. Source (S): The terminal through which the current enters the device; typically connected to ground in a low-side switch configuration.
The remaining two pins are used for mounting and thermal management purposes, often referred to as the case or substrate connections. This MOSFET is designed for applications requiring efficient switching and handling of high power, with a maximum drain-source voltage of 100V and a continuous drain current of up to 70A.
1. Gate (G): Controls the MOSFET's operation; applies voltage to turn the device on or off.
2. Drain (D): The terminal through which the main current flows out; it connects to the load.
3. Source (S): The terminal through which the current enters the device; typically connected to ground in a low-side switch configuration.
The remaining two pins are used for mounting and thermal management purposes, often referred to as the case or substrate connections. This MOSFET is designed for applications requiring efficient switching and handling of high power, with a maximum drain-source voltage of 100V and a continuous drain current of up to 70A.
Manufacturer
The BSC070N10NS3G is a power MOSFET manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor company headquartered in Neubiberg, Germany. The company focuses on developing and producing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics.
Infineon specializes in power management and efficiency technologies, along with microcontrollers and sensors. It plays a significant role in enabling energy-efficient systems and solutions, particularly in the growing fields of electric mobility, renewable energy, and smart grid technologies. Infineon’s products are widely used in applications that require efficient power conversion and management, making them essential in both traditional and emerging technologies.
Infineon specializes in power management and efficiency technologies, along with microcontrollers and sensors. It plays a significant role in enabling energy-efficient systems and solutions, particularly in the growing fields of electric mobility, renewable energy, and smart grid technologies. Infineon’s products are widely used in applications that require efficient power conversion and management, making them essential in both traditional and emerging technologies.
Application
The BSC070N10NS3G is an N-channel MOSFET widely used in various applications, including power management, automotive systems, and industrial automation. Its low on-resistance and high-speed switching capabilities make it ideal for DC-DC converters, motor drivers, and power supplies. Additionally, it is suitable for applications in consumer electronics, such as smartphones and laptops, as well as in renewable energy systems like solar inverters. The device is also utilized in electric vehicles for battery management and power distribution.
Package
The BSC070N10NS3G is packaged in a TO-220 form factor, which is a popular type of package for power MOSFETs. This package provides efficient thermal management and is suitable for various applications requiring robust power handling.
