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BSC123N08NS3G
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FabricanteTecnologias Infineon
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package / Case | TDSON-8-EP(5x6) |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 12.3mΩ@10V,33A |
| Drain to Source Voltage (Vdss) | 80V |
| Pd - Power Dissipation | 66W |
| Current - Continuous Drain(Id) | 55A |
| Reverse Transfer Capacitance (Crss @ Vds) | 15pF@40V |
| Input Capacitance(Ciss @ Vds) | 1.87nF@40V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 3.5V |
| Gate Charge(Qg) | 25nC@10V |
| Number | 1 N-channel |
Visão Geral
Description
BSC123N08NS3G is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance, high-speed performance, and efficient power management, making it suitable for switching and amplification tasks in power supplies, motor drives, and other circuits.
This device typically operates with a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 30A. Its compact package allows for easy integration into circuit designs while ensuring thermal efficiency. The BSC123N08NS3G is often used in applications requiring high efficiency and reliability, such as inverters, converters, and automotive electronics.
Overall, this MOSFET is valued for its robustness, low power loss, and ability to operate under a wide range of conditions, making it a popular choice among engineers and designers in the semiconductor field.
This device typically operates with a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 30A. Its compact package allows for easy integration into circuit designs while ensuring thermal efficiency. The BSC123N08NS3G is often used in applications requiring high efficiency and reliability, such as inverters, converters, and automotive electronics.
Overall, this MOSFET is valued for its robustness, low power loss, and ability to operate under a wide range of conditions, making it a popular choice among engineers and designers in the semiconductor field.
Equivalent
The BSC123N08NS3G is a N-channel MOSFET. Equivalent products include the IRLZ44N STP16NF06, and FQP30N06L. When looking for equivalents, ensure they match voltage, current ratings, and Rds(on) specifications. Always verify with datasheets for compatibility in specific applications.
Features
The BSC123N08NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 80V, allowing for robust performance in high-voltage circuits.
2. Current Rating: Continuous drain current (Id) of 123A, supporting high-load applications.
3. Low Rds(on): Features a low on-resistance (Rds(on)) of approximately 3.2 mΩ (at Vgs = 10V), enhancing efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Designed for quick on/off transitions, improving overall system response times.
5. Thermal Management: Equipped with a TO-220 package, facilitating effective heat dissipation in demanding environments.
6. Gate Threshold Voltage: Suitable for logic level operation with a gate threshold voltage (Vgs(th)) typically between 2-4V.
These properties make the BSC123N08NS3G ideal for applications in power supplies, motor drives, and automotive systems.
1. Voltage Rating: Maximum drain-source voltage (Vds) of 80V, allowing for robust performance in high-voltage circuits.
2. Current Rating: Continuous drain current (Id) of 123A, supporting high-load applications.
3. Low Rds(on): Features a low on-resistance (Rds(on)) of approximately 3.2 mΩ (at Vgs = 10V), enhancing efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Designed for quick on/off transitions, improving overall system response times.
5. Thermal Management: Equipped with a TO-220 package, facilitating effective heat dissipation in demanding environments.
6. Gate Threshold Voltage: Suitable for logic level operation with a gate threshold voltage (Vgs(th)) typically between 2-4V.
These properties make the BSC123N08NS3G ideal for applications in power supplies, motor drives, and automotive systems.
Pinout
The BSC123N08NS3G is a N-channel MOSFET transistor designed for various applications, primarily used in power management and switching. It features a total of 5 pins, which serve the following functions:
1. Gate (G) - Pin for controlling the MOSFET. A voltage applied to this pin turns the device on.
2. Drain (D) - The output pin where the load is connected; it carries the current when the MOSFET is in the on state.
3. Source (S) - The reference pin for the MOSFET; it is usually connected to ground in low-side switching applications.
4. Body Diode - Internal to the MOSFET, provides a path for current when the MOSFET is off, allowing reverse current flow.
5. Thermal Pad - Not a pin per se, but an area on the package to dissipate heat efficiently.
The BSC123N08NS3G is particularly valued for its low on-resistance and high switching speed, making it suitable for various power applications.
1. Gate (G) - Pin for controlling the MOSFET. A voltage applied to this pin turns the device on.
2. Drain (D) - The output pin where the load is connected; it carries the current when the MOSFET is in the on state.
3. Source (S) - The reference pin for the MOSFET; it is usually connected to ground in low-side switching applications.
4. Body Diode - Internal to the MOSFET, provides a path for current when the MOSFET is off, allowing reverse current flow.
5. Thermal Pad - Not a pin per se, but an area on the package to dissipate heat efficiently.
The BSC123N08NS3G is particularly valued for its low on-resistance and high switching speed, making it suitable for various power applications.
Manufacturer
The BSC123N08NS3G is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive ICs. The company focuses on areas such as automotive, industrial, and Internet of Things (IoT) applications, providing innovative products that support advanced technologies and energy efficiency. Infineon is recognized for its commitment to sustainability and has a strong presence in the global semiconductor market.
Application
The BSC123N08NS3G is a high-performance N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Power Supply Circuits: Efficient switching in DC-DC converters and voltage regulation.
2. Motor Control: Driving electric motors in automotive and industrial applications.
3. Load Switching: Controlling high-current loads in consumer electronics.
4. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
5. Lighting Control: Used in LED drivers and lighting applications for better efficiency.
This MOSFET offers low on-resistance and fast switching, making it suitable for applications requiring high efficiency and reliability.
1. Power Supply Circuits: Efficient switching in DC-DC converters and voltage regulation.
2. Motor Control: Driving electric motors in automotive and industrial applications.
3. Load Switching: Controlling high-current loads in consumer electronics.
4. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
5. Lighting Control: Used in LED drivers and lighting applications for better efficiency.
This MOSFET offers low on-resistance and fast switching, making it suitable for applications requiring high efficiency and reliability.
Package
The BSC123N08NS3G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and ease of mounting on heatsinks, making it suitable for high-power applications.
