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BSC160N10NS3G
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSC160N10NS3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| OperatingTemperature | -55℃~+150℃ |
| RDS(on) | 33mΩ@6V,16A |
| DraintoSourceVoltage | 100V |
| Pd-PowerDissipation | 60W |
| Current-ContinuousDrain(Id) | 42A |
| ReverseTransferCapacitance(Crss@Vds) | 11pF |
| GateThresholdVoltage(Vgs(th)@Id) | 3.5V@33uA |
| GateCharge(Qg) | 25nC@10V |
| Number | 1 N-channel |
| InputCapacitance(Ciss) | 1.7nF |
| OutputCapacitance(Coss) | 320pF |
Visão Geral
Description
Students engage in lectures, discussions, and hands-on labs to enhance their understanding of biological systems and processes. This course aims to develop critical thinking skills and a scientific approach to problem-solving in biological contexts. It may serve as a foundational course for those pursuing further studies in biology, health sciences, or related fields.
Overall, BSC160N10NS3G provides a comprehensive overview of biological principles and prepares students for more advanced topics in the field.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 160A, allowing for high-power operations.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, reducing power loss during operation and improving efficiency.
4. Fast Switching: The device supports fast switching speeds, which is essential for high-frequency applications.
5. Thermal Performance: It features excellent thermal characteristics, ensuring reliable performance even under high-heat conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications.
Overall, the BSC160N10NS3G combines high power handling with efficient thermal management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET.
The device is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various power applications.
Manufacturer
Infineon focuses on developing innovative technologies that enhance energy efficiency, safety, and connectivity. The company is a key player in the power semiconductor market, providing devices such as MOSFETs, IGBTs, and drivers, which are essential for various applications including renewable energy systems, electric vehicles, and consumer electronics.
Overall, Infineon is recognized for its commitment to advancing semiconductor technology and sustainability, making it a significant contributor to the electronics industry globally.