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BSC600N25NS3G
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSC600N25NS3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package / Case | TDSON-8 |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 60mΩ@10V,25A |
| Drain to Source Voltage (Vdss) | 250V |
| Pd - Power Dissipation | 125W |
| Current - Continuous Drain(Id) | 25A |
| Reverse Transfer Capacitance (Crss @ Vds) | 3pF@100V |
| Input Capacitance(Ciss @ Vds) | 2.35nF@100V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Gate Charge(Qg) | 29nC@100V |
| Number | 1 N-channel |
Visão Geral
Description
The BSC600N25NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance, allowing for efficient current flow and reduced energy loss, making it suitable for use in power supplies, motor drives, and DC-DC converters. With a voltage rating of 25V and a continuous drain current of 600A, it is ideal for applications that require robust performance under high power conditions.
The device also offers fast switching speeds, which enhance the efficiency of power conversion processes. Its compact package design facilitates easy integration into circuit boards, and it is typically used in automotive, industrial, and consumer electronics applications. The BSC600N25NS3G is characterized by its reliability and longevity, making it a popular choice among engineers for high-efficiency designs.
The device also offers fast switching speeds, which enhance the efficiency of power conversion processes. Its compact package design facilitates easy integration into circuit boards, and it is typically used in automotive, industrial, and consumer electronics applications. The BSC600N25NS3G is characterized by its reliability and longevity, making it a popular choice among engineers for high-efficiency designs.
Equivalent
The BSC600N25NS3G is a N-channel MOSFET. Equivalent products include:
1. IRF540N
2. STP55NF06
3. FDP7030
4. AOD508
5. FQP50N06
Ensure to check specifications such as voltage, current ratings, and Rds(on) for proper compatibility in your application.
1. IRF540N
2. STP55NF06
3. FDP7030
4. AOD508
5. FQP50N06
Ensure to check specifications such as voltage, current ratings, and Rds(on) for proper compatibility in your application.
Features
The BSC600N25NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 250V.
2. Continuous Drain Current: Capable of carrying up to 600A, making it suitable for high-current applications.
3. Low On-Resistance: The R_DS(on) is low, typically around 0.025 ohms, which enhances efficiency by minimizing power loss.
4. Fast Switching Speed: This MOSFET supports rapid switching, which is beneficial for high-frequency applications.
5. Thermal Performance: Robust thermal characteristics allow for effective heat dissipation, aiding reliability in demanding environments.
6. Package Type: Available in a TO-220 package, which facilitates easy mounting and heat sinking.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling easy drive with standard logic levels.
These features make the BSC600N25NS3G suitable for automotive, industrial, and renewable energy applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 250V.
2. Continuous Drain Current: Capable of carrying up to 600A, making it suitable for high-current applications.
3. Low On-Resistance: The R_DS(on) is low, typically around 0.025 ohms, which enhances efficiency by minimizing power loss.
4. Fast Switching Speed: This MOSFET supports rapid switching, which is beneficial for high-frequency applications.
5. Thermal Performance: Robust thermal characteristics allow for effective heat dissipation, aiding reliability in demanding environments.
6. Package Type: Available in a TO-220 package, which facilitates easy mounting and heat sinking.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling easy drive with standard logic levels.
These features make the BSC600N25NS3G suitable for automotive, industrial, and renewable energy applications.
Pinout
The BSC600N25NS3G is an N-channel MOSFET from Infineon Technologies, designed for high-performance applications. It features a total of 5 pins. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The primary terminal through which current flows out when the device is on.
3. Source (S) - The terminal where current enters the MOSFET.
In addition to the basic gate, drain, and source connections, there may be additional pins for various functions like thermal management or sensing in some configurations. The device is optimized for high efficiency, low on-resistance, and fast switching speeds, making it suitable for power management in applications such as power supplies and motor drivers.
Please refer to the specific datasheet for detailed pin assignments and electrical characteristics.
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The primary terminal through which current flows out when the device is on.
3. Source (S) - The terminal where current enters the MOSFET.
In addition to the basic gate, drain, and source connections, there may be additional pins for various functions like thermal management or sensing in some configurations. The device is optimized for high efficiency, low on-resistance, and fast switching speeds, making it suitable for power management in applications such as power supplies and motor drivers.
Please refer to the specific datasheet for detailed pin assignments and electrical characteristics.
Manufacturer
The BSC600N25NS3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. It specializes in producing a wide range of semiconductor solutions, including power semiconductors, sensors, microcontrollers, and automotive electronics. Infineon caters to various industries such as automotive, industrial, communication, and consumer electronics, focusing on energy efficiency, mobility, and security. The company is recognized for its innovation and commitment to sustainability in semiconductor technology.
Application
The BSC600N25NS3G is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC Converters: Efficient switching in power supplies.
2. Motor Drives: Controlling and driving electric motors.
3. Battery Management Systems: Switching for charging and discharging circuits.
4. Power Amplifiers: RF and audio applications.
5. Industrial Automation: Control systems in manufacturing.
6. Telecommunications: Power regulation in telecom equipment.
Its high voltage and current handling capabilities make it suitable for demanding applications where efficiency and performance are critical.
1. DC-DC Converters: Efficient switching in power supplies.
2. Motor Drives: Controlling and driving electric motors.
3. Battery Management Systems: Switching for charging and discharging circuits.
4. Power Amplifiers: RF and audio applications.
5. Industrial Automation: Control systems in manufacturing.
6. Telecommunications: Power regulation in telecom equipment.
Its high voltage and current handling capabilities make it suitable for demanding applications where efficiency and performance are critical.
Package
The BSC600N25NS3G is typically packaged in a DPAK (TO-252) package type, which is a surface-mount type suitable for power applications.
