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BSS138LT3G
+Lista de MateriaisMOSFET N-CH 50V 200MA SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #BSS138LT3G
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Ficha Técnica BSS138LT3G DataSheet
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Especificações
| Atributo | Valor |
| Supplier | onsemi,Flip Electronics,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 50 V |
| Current-ContinuousDrain(Id)@25°C | 200mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 200mA, 5V |
| Vgs(th)(Max)@Id | 1.5V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 25 V |
| PowerDissipation(Max) | 225mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
Key features of the BSS138LT3G include a low on-resistance, which reduces power loss and heat generation, and a maximum drain-source voltage (V_DS) of 50V. It can handle a continuous drain current (I_D) up to 200mA. The device's low gate-source threshold voltage allows it to be easily driven by low-voltage logic level signals from microcontrollers and other digital ICs.
Common applications for the BSS138LT3G include load switching, level shifting, and signal processing in consumer electronics, automotive, and industrial systems. Its reliability and efficiency make it a popular choice for engineers designing compact and efficient electronic devices.
Equivalent
1. 2N7002 - widely used in similar applications.
2. BS170 - another N-channel MOSFET with comparable characteristics.
3. BSS123 - similar voltage and current ratings.
4. IRLML6344TRPBF - suitable for low-voltage applications.
These equivalents typically have similar voltage, current ratings, and package types, but it's important to verify the specific parameters to ensure compatibility with your application.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 50V, making it suitable for medium voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 200mA, allowing it to handle moderate loads.
3. Low On-Resistance: The BSS138LT3G offers a low R_DS(on) of approximately 3Ω at V_GS = 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The typical gate threshold voltage (V_GS(th)) is around 1.3V, enabling it to operate effectively with low voltage logic levels.
5. Package Type: It is available in a compact SOT-23 package, making it ideal for space-constrained designs.
6. High-Speed Switching: The device supports fast switching speeds, which is beneficial in high-frequency applications.
7. Temperature Range: It operates within a temperature range of -55°C to 150°C, suitable for various environmental conditions.
These features make the BSS138LT3G a versatile component for various electronic circuits, particularly in portable and low-power applications.
Pinout
1. Gate (G): Used to control the conductivity of the device. When a voltage is applied to the gate, it allows current to flow between the source and drain.
2. Source (S): The source terminal through which the current enters the MOSFET.
3. Drain (D): The drain terminal through which the current exits the MOSFET.
Functionally, the BSS138LT3G is used for switching and amplification in electronic circuits. It is commonly employed in low-voltage applications due to its low threshold voltage and its ability to handle reasonable amounts of current for its size. The MOSFET is often used in level shifting, power management, and signal processing tasks.
Manufacturer
Application
1. Switching Circuits: Ideal for switching DC-DC converters and load switches.
2. Signal Processing: Used in digital circuits for interfacing and signal modulation.
3. Consumer Electronics: Found in portable devices for power management.
4. Automotive: Employed in low-power automotive applications for control and switching tasks.
5. LED Drivers: Utilized for driving and controlling LEDs efficiently.
6. Communication Devices: Used in RF and other communication devices for switching and amplification tasks.
Its compact size makes it suitable for space-constrained applications.