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BSS138N H6327
+Lista de MateriaisMOSFETs N-Ch 60V 230mA SOT-23-3
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSS138N H6327
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Ficha Técnica BSS138N H6327 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | MouseReel |
| StandardPackQty | 3000 |
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Description
The BSS138N H6327 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by a semiconductor manufacturer. It is a small-signal MOSFET commonly used in electronic circuits for switching and amplification purposes. Key features of the BSS138N include:
1. N-Channel: It is an N-channel MOSFET, meaning it is typically used to conduct current when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The BSS138N is known for its low on-resistance, which reduces power loss and heat generation in switching applications.
3. Voltage and Current Ratings: It generally handles voltages up to 50V and currents up to 200mA, making it suitable for low-power applications.
4. Compact Size: The MOSFET is typically available in a compact SOT-23 package, which is ideal for space-constrained designs.
5. Applications: Commonly used in small-signal switching applications, level shifting, and as a load switch in battery-powered devices.
Overall, the BSS138N H6327 is valued for its efficiency, reliability, and compact form factor in electronic circuit design.
1. N-Channel: It is an N-channel MOSFET, meaning it is typically used to conduct current when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The BSS138N is known for its low on-resistance, which reduces power loss and heat generation in switching applications.
3. Voltage and Current Ratings: It generally handles voltages up to 50V and currents up to 200mA, making it suitable for low-power applications.
4. Compact Size: The MOSFET is typically available in a compact SOT-23 package, which is ideal for space-constrained designs.
5. Applications: Commonly used in small-signal switching applications, level shifting, and as a load switch in battery-powered devices.
Overall, the BSS138N H6327 is valued for its efficiency, reliability, and compact form factor in electronic circuit design.
Equivalent
The BSS138N H6327 is a N-channel MOSFET commonly used in low-power switching applications. Equivalent products include:
1. 2N7002 - another N-channel MOSFET with similar characteristics.
2. BSS138 - a direct equivalent with slightly different packaging.
3. BSS123 - another alternative with comparable specs.
4. IRLML2402 - similar performance in a different package.
Always verify the specific electrical and thermal characteristics to ensure they meet your application requirements before substituting.
1. 2N7002 - another N-channel MOSFET with similar characteristics.
2. BSS138 - a direct equivalent with slightly different packaging.
3. BSS123 - another alternative with comparable specs.
4. IRLML2402 - similar performance in a different package.
Always verify the specific electrical and thermal characteristics to ensure they meet your application requirements before substituting.
Features
The BSS138N H6327 is an N-channel MOSFET known for its compact size and efficiency. Here are its key features:
1. Voltage/Current Ratings: It has a drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 220mA.
2. R_DS(on): The on-resistance is typically 3.5Ω at a gate-source voltage (V_GS) of 10V, which makes it efficient for low-power applications.
3. Package Type: This MOSFET is housed in a SOT-23 package, allowing for space-saving in circuit designs.
4. Low Gate Threshold Voltage: Typically around 1.2V, making it compatible with lower voltage drive circuits.
5. Fast Switching Speed: Suitable for high-speed applications, which enhances performance in digital circuits.
6. Applications: Commonly used in level shifting, load switching, and DC-DC conversion applications.
7. Temperature Range: Operates effectively within a temperature range of -55°C to +150°C.
These features make the BSS138N H6327 versatile for various low-power and high-speed applications, especially in compact electronic devices.
1. Voltage/Current Ratings: It has a drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 220mA.
2. R_DS(on): The on-resistance is typically 3.5Ω at a gate-source voltage (V_GS) of 10V, which makes it efficient for low-power applications.
3. Package Type: This MOSFET is housed in a SOT-23 package, allowing for space-saving in circuit designs.
4. Low Gate Threshold Voltage: Typically around 1.2V, making it compatible with lower voltage drive circuits.
5. Fast Switching Speed: Suitable for high-speed applications, which enhances performance in digital circuits.
6. Applications: Commonly used in level shifting, load switching, and DC-DC conversion applications.
7. Temperature Range: Operates effectively within a temperature range of -55°C to +150°C.
These features make the BSS138N H6327 versatile for various low-power and high-speed applications, especially in compact electronic devices.
Pinout
The BSS138N H6327 is a small-signal MOSFET that typically comes in a SOT-23 package and is used for switching applications. It has three pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the MOSFET on or off.
2. Source (S): This is usually connected to the ground in an N-channel configuration.
3. Drain (D): This pin is where the current flows out from when the MOSFET is switched on.
The BSS138N is often used in low-voltage, low-current applications such as level shifting, load switching, and general-purpose switching. It is known for its low threshold voltage, making it suitable for interfacing with lower voltage digital circuits.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the MOSFET on or off.
2. Source (S): This is usually connected to the ground in an N-channel configuration.
3. Drain (D): This pin is where the current flows out from when the MOSFET is switched on.
The BSS138N is often used in low-voltage, low-current applications such as level shifting, load switching, and general-purpose switching. It is known for its low threshold voltage, making it suitable for interfacing with lower voltage digital circuits.
Manufacturer
The BSS138N H6327 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs and produces a wide range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors. It operates globally and serves various industries such as automotive, industrial, consumer electronics, and communication. Infineon is known for its focus on energy efficiency, security, and mobility solutions.
Application
The BSS138N H6327 is a N-channel MOSFET commonly used in applications requiring voltage-level shifting, load switching, and signal switching. Its small size and low on-resistance make it suitable for portable and compact electronic devices. It is often employed in DC-DC converters, LED drivers, and battery management systems. Additionally, the MOSFET's fast switching capabilities and low gate threshold voltage make it ideal for high-speed switching applications in consumer electronics and communication devices. Its compatibility with low-power circuits makes it a popular choice in IoT devices and wearable technology.
Package
The BSS138N H6327 is a surface-mount N-channel MOSFET provided in a SOT-23 package type.
