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BSS138PW,115
+Lista de MateriaisMOSFET N-CH 60V 320MA SOT323
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FabricanteNexperia USA Inc.
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Peça do Fabricante #BSS138PW,115
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Especificações
| Atributo | Valor |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 320mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 300mA, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V |
| Power Dissipation (Max) | 260mW (Ta), 830mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-323 |
Visão Geral
Description
BSS138PW-115 is a variant of the BSS138 N‑channel MOSFET. It’s a small-signal enhancement device used for low-current switching and bidirectional level shifting on logic buses.
Key specs (typical):
- Vds: 50 V; Id: ~180 mA max
- Rds(on): roughly 3–5 Ω at higher gate drive (e.g., Vgs ≈ 4.5 V; higher at lower Vgs)
- Vgs(th): ~0.8–2.5 V
- Package: PW (a small SOT-23‑style package); 115 is likely a date/lot code, not a spec
Common uses:
- Bidirectional level shifting (e.g., I2C) and other low-power switching tasks
- General-purpose small-signal switching on compact boards
Pinout (typical; verify in datasheet):
- Gate = pin 1, Drain = pin 2, Source = pin 3
Important notes:
- Body diode from drain to source; orientation matters
- Not suited for high-current or high-speed switching; check the datasheet for limits and SOA.
Key specs (typical):
- Vds: 50 V; Id: ~180 mA max
- Rds(on): roughly 3–5 Ω at higher gate drive (e.g., Vgs ≈ 4.5 V; higher at lower Vgs)
- Vgs(th): ~0.8–2.5 V
- Package: PW (a small SOT-23‑style package); 115 is likely a date/lot code, not a spec
Common uses:
- Bidirectional level shifting (e.g., I2C) and other low-power switching tasks
- General-purpose small-signal switching on compact boards
Pinout (typical; verify in datasheet):
- Gate = pin 1, Drain = pin 2, Source = pin 3
Important notes:
- Body diode from drain to source; orientation matters
- Not suited for high-current or high-speed switching; check the datasheet for limits and SOA.
Equivalent
Common equivalents to the BSS138PW (N‑channel small-signal MOSFET) include: 2N7002, Si2302, IRLML2502, FDV301N, and PMV20XN. Verify VDS (≈50–60V), ID, RDS(on) and SOT‑23 pinout/thermal ratings match your design before substituting.
Pinout
Pin count: 3 pins — Gate (G), Drain (D), Source (S).
Function: N‑channel enhancement‑mode MOSFET (small‑signal/low‑voltage switching device) used for switching, level shifting, pull‑down/load switching and small-signal amplification in low‑power circuits.
Function: N‑channel enhancement‑mode MOSFET (small‑signal/low‑voltage switching device) used for switching, level shifting, pull‑down/load switching and small-signal amplification in low‑power circuits.
Manufacturer
Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (Dutch-headquartered) that specializes in discrete components, small-signal MOSFETs, diodes and logic/analog ICs for automotive, industrial and consumer electronics.
What kind of company: Nexperia is a global semiconductor manufacturer (Dutch-headquartered) that specializes in discrete components, small-signal MOSFETs, diodes and logic/analog ICs for automotive, industrial and consumer electronics.
Application
Common application areas for BSS138PW (115):
- Bidirectional level shifting for I2C and other open-drain/bus interfaces between different logic voltages (e.g., 3.3V and 5V).
- General-purpose, low-current switching in microcontroller/sensor circuits.
- Small-signal buffering and gating in compact, battery-powered devices.
- Prototyping and hobbyist projects requiring a tiny MOSFET for level translation or load switching.
Note: It is a logic-level N-channel MOSFET suitable for low-power switching and level-shifting tasks; consult datasheet for exact ratings and limits.
- Bidirectional level shifting for I2C and other open-drain/bus interfaces between different logic voltages (e.g., 3.3V and 5V).
- General-purpose, low-current switching in microcontroller/sensor circuits.
- Small-signal buffering and gating in compact, battery-powered devices.
- Prototyping and hobbyist projects requiring a tiny MOSFET for level translation or load switching.
Note: It is a logic-level N-channel MOSFET suitable for low-power switching and level-shifting tasks; consult datasheet for exact ratings and limits.
Package
SOT-23 (SC-59) 3-pin surface-mount package.
