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BSS138W H6327
+Lista de MateriaisMOSFETs N-Ch SOT-323-3
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSS138W H6327
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Ficha Técnica BSS138W H6327 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | MouseReel |
| StandardPackQty | 3000 |
Visão Geral
Description
Key features include:
1. Low On-Resistance: This ensures efficient current conduction with minimal power loss.
2. High-Speed Switching: The BSS138W can switch on and off rapidly, making it ideal for high-speed applications.
3. Voltage Rating: It typically handles a maximum drain-source voltage of around 50V.
4. Current Rating: The device can usually manage continuous drain currents up to about 200mA.
Applications commonly include load switching, level shifting, and interfacing with low-voltage logic levels. It is often employed in portable electronics, automotive systems, and various consumer electronics due to its small form factor and reliable performance. Always consult the specific datasheet for detailed specifications and ensure compatibility with your circuit requirements.
Equivalent
1. 2N7002: A widely used N-channel MOSFET with similar specifications.
2. BSS138: The through-hole version of the BSS138W.
3. NDS7002A: Another small N-channel MOSFET with comparable performance.
4. 2N7002K: A close equivalent with similar voltage and current ratings.
When selecting equivalents, always verify the specific electrical characteristics and packaging requirements for your application.
Features
1. Type: It is an N-channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (V_DS) rating of 50V.
3. Current Rating: The continuous drain current (I_D) is 200 mA.
4. R_DS(on): It offers a low on-state resistance, typically around 3 ohms at V_GS = 10V.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 0.8V to 1.5V.
6. Power Dissipation: It can dissipate up to 300 mW of power.
7. Fast Switching: The device is capable of fast switching speeds, suitable for high-speed applications.
8. Low Gate Charge: It features a low gate charge, minimizing drive losses and making it efficient for low-power applications.
9. Applications: Commonly used in level shifting, signal switching, and load switching applications due to its efficiency and compact size.
These features make the BSS138W H6327 a versatile choice for various electronic applications where space and power efficiency are critical.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET's state (on or off) by receiving the appropriate voltage signal.
2. Source (S): This pin acts as the terminal through which the charge carriers (electrons, in case of an N-channel MOSFET) enter the transistor.
3. Drain (D): The drain is the terminal through which the charge carriers exit the transistor when the MOSFET is in the 'on' state.
The BSS138W is commonly used for switching applications and level shifting due to its low on-resistance and compatibility with low voltage levels.
Manufacturer
Infineon focuses on innovation and technology development, aiming to meet the growing demands for energy efficiency, mobility, and security. Their products are integral to modern electronic systems, providing essential functionalities such as power management, cybersecurity, and sensor technologies. The company has a strong reputation for quality and reliability, making it a key player in the semiconductor industry.
Application
1. Load Switching: It is used for turning on and off low-power loads in circuits.
2. Level Shifting: It facilitates interfacing between different voltage levels in digital circuits.
3. Signal Amplification: It can amplify small signals in analog circuits.
4. DC-DC Conversion: Utilized in power management circuits for voltage regulation.
5. LED Drivers: It controls LED brightness by pulse-width modulation (PWM).
6. Low-Voltage Applications: Ideal for low-voltage, low-current applications due to its low on-state resistance and gate threshold voltage.
These characteristics make it suitable for use in consumer electronics, automotive, and industrial applications.