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BSS169H6327XTSA1
+Lista de MateriaisMOSFET N-CH 100V 170MA SOT23-3
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FabricanteTecnologias Infineon
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Peça do Fabricante #BSS169H6327XTSA1
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Ficha Técnica BSS169H6327XTSA1 DataSheet
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Pacote SOT-23-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 170mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 0V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 170mA, 10V |
| Vgs(th)(Max) @ Id | 1.8V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.8 nC @ 7 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 68 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Visão Geral
Description
BSS169H6327XTSA1 is a specific part number for a semiconductor component, likely a transistor or similar device, manufactured by Infineon Technologies. This component is part of the OptiMOS™ series, which is known for offering low power consumption and high efficiency, suitable for applications in power management, DC-DC converters, and various industrial electronics.
Key features of BSS169H6327XTSA1 may include low on-resistance, fast switching capabilities, and a compact surface-mount package, making it ideal for space-constrained applications. The device is typically used in circuits where efficiency and reliability are critical, such as in automotive systems, renewable energy setups, and consumer electronics.
Understanding the specifications and applications of this component requires consulting the detailed datasheet provided by Infineon, which includes electrical characteristics, thermal performance data, and usage guidelines. This ensures optimal integration into electronic designs and helps meet specific operational requirements of the intended application. Always verify the part's specifications to ensure it aligns with your project's needs.
Key features of BSS169H6327XTSA1 may include low on-resistance, fast switching capabilities, and a compact surface-mount package, making it ideal for space-constrained applications. The device is typically used in circuits where efficiency and reliability are critical, such as in automotive systems, renewable energy setups, and consumer electronics.
Understanding the specifications and applications of this component requires consulting the detailed datasheet provided by Infineon, which includes electrical characteristics, thermal performance data, and usage guidelines. This ensures optimal integration into electronic designs and helps meet specific operational requirements of the intended application. Always verify the part's specifications to ensure it aligns with your project's needs.
Equivalent
The BSS169H6327XTSA1 is an N-channel MOSFET by Infineon. Equivalent products include the 2N7002, BSS138, and 2N7000, which are also small-signal N-channel MOSFETs. These alternatives may have differences in specifications like voltage, current, or packaging, so it's important to compare them based on the specific requirements of your application. Always consult datasheets for detailed compatibility.
Features
The BSS169H6327XTSA1 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. Here are its key features:
1. N-Channel MOSFET: It conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Typically supports low to medium voltage applications, commonly around 50V and a few amperes of current.
3. Low On-Resistance (Rds(on)): Offers efficient performance with minimal power loss and heat generation.
4. Small Package Size: Usually comes in a compact SOT-23 package, making it suitable for space-constrained designs.
5. High-Speed Switching: Capable of handling fast switching operations, making it ideal for high-frequency applications.
6. Applications: Often used in switching applications, battery-powered devices, and DC-DC converters.
7. Thermal Performance: Designed to provide efficient thermal management in a small footprint.
This MOSFET is commonly utilized in various electronic circuits requiring efficient power management and switching capabilities. Always refer to the datasheet for specific electrical characteristics and maximum ratings.
1. N-Channel MOSFET: It conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Typically supports low to medium voltage applications, commonly around 50V and a few amperes of current.
3. Low On-Resistance (Rds(on)): Offers efficient performance with minimal power loss and heat generation.
4. Small Package Size: Usually comes in a compact SOT-23 package, making it suitable for space-constrained designs.
5. High-Speed Switching: Capable of handling fast switching operations, making it ideal for high-frequency applications.
6. Applications: Often used in switching applications, battery-powered devices, and DC-DC converters.
7. Thermal Performance: Designed to provide efficient thermal management in a small footprint.
This MOSFET is commonly utilized in various electronic circuits requiring efficient power management and switching capabilities. Always refer to the datasheet for specific electrical characteristics and maximum ratings.
Pinout
The BSS169H6327XTSA1 is a small-signal N-channel MOSFET. It typically comes in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate can turn the MOSFET on or off.
2. Source (S): This is the terminal through which the current enters the MOSFET when it is in the on state.
3. Drain (D): This is the terminal through which the current exits the MOSFET.
The BSS169 is commonly used for switching and amplification purposes in low-power electronic circuits. It features low on-resistance and fast switching characteristics, making it suitable for various applications such as signal processing and voltage regulation. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate can turn the MOSFET on or off.
2. Source (S): This is the terminal through which the current enters the MOSFET when it is in the on state.
3. Drain (D): This is the terminal through which the current exits the MOSFET.
The BSS169 is commonly used for switching and amplification purposes in low-power electronic circuits. It features low on-resistance and fast switching characteristics, making it suitable for various applications such as signal processing and voltage regulation. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Manufacturer
The BSS169H6327XTSA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components. The company focuses on producing products for applications such as automotive, industrial power control, power management, and digital security solutions. Infineon's offerings include microcontrollers, power semiconductors, sensors, and security ICs, among others. They are known for their innovation in energy efficiency, mobility, and security technologies. Headquartered in Neubiberg, Germany, Infineon has a significant global presence with operations in various countries.
Application
The BSS169H6327XTSA1 is a small-signal MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Utilized in high-speed switching applications due to its fast switching capability.
2. Amplifiers: Employed in low-power amplification circuits.
3. Signal Processing: Used in signal modulation and demodulation tasks.
4. Battery Management: Suitable for battery protection and management systems.
5. Consumer Electronics: Integrated into devices for efficient power management.
6. Telecommunications: Used in RF applications and signal routing.
7. Automotive: Implemented in various automotive electronic systems for control and power management.
Its versatility and efficiency make it ideal for compact and energy-efficient designs.
1. Switching Circuits: Utilized in high-speed switching applications due to its fast switching capability.
2. Amplifiers: Employed in low-power amplification circuits.
3. Signal Processing: Used in signal modulation and demodulation tasks.
4. Battery Management: Suitable for battery protection and management systems.
5. Consumer Electronics: Integrated into devices for efficient power management.
6. Telecommunications: Used in RF applications and signal routing.
7. Automotive: Implemented in various automotive electronic systems for control and power management.
Its versatility and efficiency make it ideal for compact and energy-efficient designs.
Package
The BSS169H6327XTSA1 is a small-signal MOSFET from Infineon Technologies. It is typically available in a SOT-23 package, which is a small, surface-mount type, making it suitable for compact electronic designs.
