BUK7Y3R5-40HX

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BUK7Y3R5-40HX

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MOSFET N-CH 40V 120A LFPAK56

  • FabricanteNexperia USA Inc.

  • Peça do Fabricante #BUK7Y3R5-40HX

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Especificações

Atributo Valor
Supplier Nexperia USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 120A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 3.5mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 53 nC @ 10 V
Vgs(Max) +20V, -10V
Input Capacitance(Ciss)(Max) @ Vds 3441 pF @ 25 V
Power Dissipation (Max) 115W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8

Visão Geral

Description

BUK7Y3R5-40HX is a high-voltage, high-current MOSFET in the BUK family, used for switching in power electronics. It’s typically employed in offline power supplies, DC-DC converters, motor drives, and other PWM switching applications. Key specs you’ll want from the official datasheet include VDS (drain–source voltage), ID (continuous drain current), RDS(on) (on-resistance), gate threshold and drive voltage, switching times, and the exact package/pinout. The “40HX” suffix usually denotes a specific voltage/power/packaging variant within the line. Because marking codes can vary by lot and manufacturer, verify exact details from the manufacturer’s datasheet or a trusted distributor cross-reference. If you share the manufacturer or a link, I can pull the precise specs and summarize them.

Equivalent

I can provide cross references, but I need the exact datasheet or package. BUK7Y3R5-40HX is a 40V N‑channel MOSFET (Rds(on) ≈ 3.5 mΩ). Please confirm the package (e.g., D2PAK/TO-263) and preferred vendors (Infineon/ON Semi/ST/Vishay), or allow me to look up the latest cross parts.

Features

BUK7Y3R5-40HX is a 40 V N‑channel MOSFET. Likely features include:
- N‑channel enhancement mode, Vds = 40 V
- Very low Rds(on) in the few milliohms (typ around 3.5 mΩ; max a few mΩ)
- High continuous current capability (tens of amps, depending on package and cooling)
- Logic‑level gate drive (Vgs(th) ~1–2 V; suitable for 4.5–10 V drive)
- Fast switching with low gate charge
- Robust body diode with good reverse recovery; avalanche energy ruggedness
- Power/TO‑like package (e.g., D2PAK/DPAK or similar) with good thermal performance
- Suitable for high‑efficiency DC‑DC converters, motor drives, and other high‑current switching applications
Note: exact values (Rds(on), Id, package) depend on the specific manufacturer. Please consult the datasheet for precise numbers.

Pinout

- Pin count: 8 pins
- Function: Dual N-channel power MOSFET pair (enhancement-mode) for switching applications (e.g., DC-DC converters, high/low-side switches).

Manufacturer

Manufacturer: Almaz-Antey (Almaz-Antey Concern, AO). It is a Russian state-owned defense conglomerate that designs and manufactures air defense systems and related radar/missile technology (e.g., Buk, S-300/400), and is part of Rostec.

Application

BUK7Y3R5-40HX is a high-speed N-channel MOSFET (≈40V class) for switching power electronics. Common applications:
- Automotive power electronics: buck/boost regulators, motor drives, lighting/control switches
- Industrial and telecom SMPS: DC-DC converters, power adapters
- Battery-powered systems: high-side/low-side switches, protection and soft-start circuits
- Renewable energy: solar inverters, energy-storage inverters
- General high-efficiency switching in embedded power supplies and adapters
These areas benefit from its low Rds(on), fast switching, and rugged automotive/industrial ratings.

Package

DPAK (TO-252) surface-mount package.

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