BUK7Y4R8-60EX

Imagens apenas para referência

BUK7Y4R8-60EX

+Lista de Materiais

MOSFET N-CH 60V 100A LFPAK56

  • FabricanteNexperia USA Inc.

  • Peça do Fabricante #BUK7Y4R8-60EX

  • Em Estoque5327

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 73.1 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5520 pF @ 25 V
PowerDissipation(Max) 238W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage LFPAK56, Power-SO8

Visão Geral

Description

BUK7Y4R8-60EX is a 60-volt N-channel enhancement-mode power MOSFET from the BUK family, intended for high-efficiency switching in power electronics.
Key points
- Ratings: Vds ≈ 60 V; very low on-resistance (Rds(on) around a few milliohms), enabling low conduction losses.
- Applications: switching regulators (buck/boost), motor drivers, automotive/power electronics.
- Features: fast switching capability, good thermal performance, suitable for compact, high‑current designs.
- Packaging: surface-mount power package (typical for high-power dissipation; check exact package type in the datasheet).
- Drive: gate driven by a suitable gate voltage (often logic-level or higher, per datasheet); verify gate threshold, Rds(on) at your Vgs, Id, and SOA.
For precise electrical specs, thermal limits, and safe operating area, consult the official datasheet.

Features

Here are typical features for the BUK7Y4R8-60EX (MOSFET family):
- N-channel enhancement-mode MOSFET
- Vds: 60 V
- Rds(on): ~4.8 mΩ (typical)
- Id (continuous drain current): around 7 A
- Fast switching suitable for SMPS and switching power supplies
- Low gate charge for efficient drive
- Avalanche/rugged energy handling for protection against inductive loads
- Package: Power SMD (TO-252/DPAK-type with exposed pad)
- RoHS compliant; wide operating temperature range
Note: Exact figures (e.g., Rds(on), Id, gate threshold) vary by lot. Please consult the official datasheet for precise specifications and recommended operating conditions.

Pinout

Pin count: 8 pins (SO-8/exposed-pad variant).
Function: N-channel enhancement-mode power MOSFET (single device) used for high-power switching (commonly in buck/boost DC-DC converter stages; 60V class, ~4.8 mΩ Rds(on) as indicated by the part name).

Application

BUK7Y4R8-60EX is a 60V, ~4.8 mΩ N-channel MOSFET. Ideal for high-current switching applications such as:
- Synchronous buck/boost DC-DC converters
- Motor drivers (BLDC, stepper)
- Automotive and industrial power electronics
- LED drivers
- Solar/inverter and energy-storage power stages
- UPS and telecom power supplies
Note: verify datasheet for exact ratings and packaging.

Package

D²PAK (TO-263) package with an exposed pad (drain).

Produtos relacionados a BUK7Y4R8-60EX