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BUK964R2-80E118
+Lista de MateriaisNOW NEXPERIA BUK964R2-80E - POWE
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FabricanteNXP USA Inc.
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Peça do Fabricante #BUK964R2-80E118
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Ficha Técnica BUK964R2-80E118 DataSheet
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Pacote D2PAK-3
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Especificações
| Atributo | Valor |
| Package | Bulk |
| ProductStatus | Active |
Visão Geral
Description
Key features of the BUK964R2-80E118 include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of around 80 volts and a continuous drain current (I_D) of approximately 120 amperes, making it suitable for high-power applications.
2. Low On-Resistance: This MOSFET is designed with low on-state resistance (R_DS(on)), which minimizes power loss and increases efficiency during operation.
3. Thermal Performance: It is usually housed in a package that offers efficient thermal management, ensuring reliable performance under high-temperature conditions.
4. Enhanced Switching Speeds: The device is designed to switch on and off rapidly, which improves performance in applications requiring fast switching.
Overall, the BUK964R2-80E118 is valued for its efficiency, reliability, and versatility in handling substantial power loads in various electronic circuits.
Equivalent
Features
1. N-channel MOSFET: It is designed for high-efficiency power switching applications.
2. Voltage and Current Ratings: Typically supports a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) that can range depending on the specific package and cooling conditions.
3. Low On-Resistance: Provides lower conduction losses due to its low R_DS(on), which enhances efficiency.
4. Fast Switching Speed: Suitable for high-frequency applications due to its rapid switch on/off capabilities.
5. Robust Design: Includes features for enhanced ruggedness and reliability, such as avalanche energy rating.
6. Thermal Performance: Often housed in a package designed to dissipate heat efficiently, supporting higher power levels.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for motor control, power management, and inverter circuits.
These features make the BUK964R2-80E118 a versatile and widely used component in various electronic applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, a conductive channel is created between the drain and source, allowing current to flow.
2. Drain (D): The drain is the terminal through which the load current enters. In an N-channel MOSFET, this is connected to the positive side of the power supply.
3. Source (S): The source is the terminal through which the load current exits. In an N-channel MOSFET, this is typically connected to ground.
These MOSFETs are used in various applications, including switching and amplifying electronic signals in devices such as power supplies, motor controllers, and other electronic circuits.
Manufacturer
Application
1. Automotive Systems: Used in electric power steering, fuel injection systems, and other automotive electronics for efficient power management.
2. Power Supplies: Suitable for use in switched-mode power supplies (SMPS) due to its high efficiency.
3. Motor Control: Applied in driving motors and actuators in industrial and consumer electronics.
4. Lighting Systems: Used in LED drivers and other lighting control applications for its fast switching properties.
5. DC-DC Converters: Employed in voltage regulation and conversion circuits for its low on-resistance and high-speed switching.