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BVSS138LT1G
+Lista de MateriaisMOSFET N-CH 50V 200MA SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #BVSS138LT1G
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Pacote SOT23-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 50 V |
| Current-ContinuousDrain(Id)@25°C | 200mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 200mA, 5V |
| Vgs(th)(Max)@Id | 1.5V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 25 V |
| PowerDissipation(Max) | 225mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
The BVSS138LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching applications. Manufactured by ON Semiconductor, it is part of the BSS138 series, known for its small signal and low power capabilities. The device features a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 200mA, making it suitable for low-power applications.
Housed in a SOT-23 package, the BVSS138LT1G is compact, which is ideal for space-constrained applications. It has a low on-state resistance, which ensures efficient operation with minimal power loss. The MOSFET is also designed to operate with low gate threshold voltage, allowing it to be driven directly by logic level signals.
Typical applications include load switching, power management, and interfacing applications in portable and battery-powered devices. Its reliability and efficiency make it a popular choice for designers in need of a small, effective switching solution.
Housed in a SOT-23 package, the BVSS138LT1G is compact, which is ideal for space-constrained applications. It has a low on-state resistance, which ensures efficient operation with minimal power loss. The MOSFET is also designed to operate with low gate threshold voltage, allowing it to be driven directly by logic level signals.
Typical applications include load switching, power management, and interfacing applications in portable and battery-powered devices. Its reliability and efficiency make it a popular choice for designers in need of a small, effective switching solution.
Equivalent
The BVSS138LT1G is a small-signal MOSFET. Equivalent products include:
1. 2N7002 - A popular N-channel MOSFET.
2. BSS138 - Often considered a direct equivalent, with similar specifications.
3. BS170 - Another small-signal N-channel MOSFET, though with slightly different characteristics.
4. IRLML2502 - Offers similar functionality in a different package.
Make sure to compare key parameters like Vds, Id, and Rds(on) to ensure compatibility with your application.
1. 2N7002 - A popular N-channel MOSFET.
2. BSS138 - Often considered a direct equivalent, with similar specifications.
3. BS170 - Another small-signal N-channel MOSFET, though with slightly different characteristics.
4. IRLML2502 - Offers similar functionality in a different package.
Make sure to compare key parameters like Vds, Id, and Rds(on) to ensure compatibility with your application.
Features
The BVSS138LT1G is a small signal MOSFET transistor designed for various electronic applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It supports a drain-source voltage of 50V.
3. Current Rating: The continuous drain current is rated at 200mA.
4. RDS(on): The on-state resistance is typically low, around 3 ohms, enhancing its efficiency.
5. Gate Threshold Voltage: Typically around 1V, allowing it to operate in low voltage applications.
6. Package: Available in SOT-23 package, which is compact and suitable for surface mount technology.
7. Applications: Ideal for switching applications, load switch circuits, and signal processing tasks in portable devices.
8. Temperature Range: Operates efficiently within a wide temperature range, making it versatile for various environments.
These features make the BVSS138LT1G suitable for low-power, high-efficiency applications in modern electronic circuits.
1. Type: N-channel MOSFET.
2. Voltage Rating: It supports a drain-source voltage of 50V.
3. Current Rating: The continuous drain current is rated at 200mA.
4. RDS(on): The on-state resistance is typically low, around 3 ohms, enhancing its efficiency.
5. Gate Threshold Voltage: Typically around 1V, allowing it to operate in low voltage applications.
6. Package: Available in SOT-23 package, which is compact and suitable for surface mount technology.
7. Applications: Ideal for switching applications, load switch circuits, and signal processing tasks in portable devices.
8. Temperature Range: Operates efficiently within a wide temperature range, making it versatile for various environments.
These features make the BVSS138LT1G suitable for low-power, high-efficiency applications in modern electronic circuits.
Pinout
The BVSS138LT1G is a small-signal MOSFET commonly used in various electronic applications. It typically comes in a SOT-23 package, which has 3 pins. The pin configuration and functions are as follows:
1. Gate (Pin 1): This pin is the control terminal of the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Source (Pin 2): This pin is the terminal through which the current enters the MOSFET. It is usually connected to the ground in N-channel MOSFET configurations.
3. Drain (Pin 3): This pin is the terminal through which the current exits the MOSFET. It is connected to the load that needs to be switched or amplified.
The BVSS138LT1G is often used for switching applications due to its low on-resistance and fast switching speed. It is suitable for use in battery-powered devices, signal processing, and other low-power applications.
1. Gate (Pin 1): This pin is the control terminal of the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Source (Pin 2): This pin is the terminal through which the current enters the MOSFET. It is usually connected to the ground in N-channel MOSFET configurations.
3. Drain (Pin 3): This pin is the terminal through which the current exits the MOSFET. It is connected to the load that needs to be switched or amplified.
The BVSS138LT1G is often used for switching applications due to its low on-resistance and fast switching speed. It is suitable for use in battery-powered devices, signal processing, and other low-power applications.
Manufacturer
The BVSS138LT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components used in various electronic devices and systems. The company focuses on providing energy-efficient, innovative solutions that are used in automotive, industrial, cloud power, and IoT applications, among others. Headquartered in the United States, onsemi is known for its commitment to sustainability and delivering high-performance products that support the advancing technology landscape.
Application
The BVSS138LT1G is a small-signal MOSFET used primarily in low-power switching applications. Key application areas include:
1. Load Switching: Enables efficient control of low-current loads in electronic devices.
2. Signal Switching: Useful in analog and digital signal routing in communication equipment.
3. Voltage Level Shifting: Facilitates interfacing between different voltage levels in mixed-signal circuits.
4. Battery-powered Devices: Ideal for portable electronics due to low power consumption.
5. Consumer Electronics: Commonly used in TVs, audio equipment, and other consumer gadgets for efficient power management.
Its compact size and low on-resistance make it suitable for space-constrained applications.
1. Load Switching: Enables efficient control of low-current loads in electronic devices.
2. Signal Switching: Useful in analog and digital signal routing in communication equipment.
3. Voltage Level Shifting: Facilitates interfacing between different voltage levels in mixed-signal circuits.
4. Battery-powered Devices: Ideal for portable electronics due to low power consumption.
5. Consumer Electronics: Commonly used in TVs, audio equipment, and other consumer gadgets for efficient power management.
Its compact size and low on-resistance make it suitable for space-constrained applications.
Package
The BVSS138LT1G is a surface-mount N-channel MOSFET typically packaged in a SOT-23 format.
