Imagens apenas para referência
BVSS84LT1G
+Lista de MateriaisMOSFET P-CH 50V 130MA SOT23-3
-
Fabricanteonsemi
-
Peça do Fabricante #BVSS84LT1G
-
Pacote SOT-23-3
-
Em Estoque3911
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 130mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 10Ohm @ 100mA, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 36 pF @ 5 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Visão Geral
Description
The BVSS84LT1G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used primarily for switching and amplification applications. It is a part of the BVSS84 series and is manufactured by ON Semiconductor. This component is characterized by its capability to handle low to medium power loads, making it suitable for various electronic circuits, including power management tasks in portable devices.
Key features of the BVSS84LT1G include a low on-state resistance, which enhances efficiency by minimizing power loss during operation. It also has a maximum drain-source voltage (V_DS) of -50V and a continuous drain current (I_D) of -130mA. The MOSFET comes in a compact SOT-23 package, making it ideal for space-constrained applications.
Additionally, its low gate threshold voltage allows it to be driven by lower voltages, enabling compatibility with microcontrollers and other low-voltage logic devices. The BVSS84LT1G is widely used in consumer electronics, telecommunications, and other fields requiring reliable, efficient switching components.
Key features of the BVSS84LT1G include a low on-state resistance, which enhances efficiency by minimizing power loss during operation. It also has a maximum drain-source voltage (V_DS) of -50V and a continuous drain current (I_D) of -130mA. The MOSFET comes in a compact SOT-23 package, making it ideal for space-constrained applications.
Additionally, its low gate threshold voltage allows it to be driven by lower voltages, enabling compatibility with microcontrollers and other low-voltage logic devices. The BVSS84LT1G is widely used in consumer electronics, telecommunications, and other fields requiring reliable, efficient switching components.
Equivalent
The BVSS84LT1G is a P-channel MOSFET. Its equivalent products include the NXP PMV48XP, Vishay SI2333DS, and Fairchild FDN5630. These components have similar electrical characteristics and package types, making them suitable substitutes in most applications. Always verify the specifications and pin configurations before substituting to ensure compatibility with your circuit design.
Features
The BVSS84LT1G is a surface-mount, small-signal Schottky diode from ON Semiconductor. Key features include:
1. Low Forward Voltage Drop: This allows for efficient power usage and minimal energy loss.
2. High Speed: Supports fast switching capabilities, making it suitable for high-frequency applications.
3. Guard Ring Construction: Offers increased protection against voltage transients and enhances reliability.
4. Compact Package: Available in a SOD-323 package, which saves space on printed circuit boards (PCBs).
5. Low Leakage Current: Ensures minimal current loss when not conducting.
6. Maximum Reverse Voltage: Typically around 30 volts, making it suitable for low to moderate voltage applications.
7. Current Rating: Generally supports around 200 mA of forward current.
8. Wide Operating Temperature Range: Can operate efficiently in temperatures ranging from -55°C to +150°C.
These features make the BVSS84LT1G suitable for applications in RF circuits, power management, and general-purpose rectification where efficiency and space are important considerations.
1. Low Forward Voltage Drop: This allows for efficient power usage and minimal energy loss.
2. High Speed: Supports fast switching capabilities, making it suitable for high-frequency applications.
3. Guard Ring Construction: Offers increased protection against voltage transients and enhances reliability.
4. Compact Package: Available in a SOD-323 package, which saves space on printed circuit boards (PCBs).
5. Low Leakage Current: Ensures minimal current loss when not conducting.
6. Maximum Reverse Voltage: Typically around 30 volts, making it suitable for low to moderate voltage applications.
7. Current Rating: Generally supports around 200 mA of forward current.
8. Wide Operating Temperature Range: Can operate efficiently in temperatures ranging from -55°C to +150°C.
These features make the BVSS84LT1G suitable for applications in RF circuits, power management, and general-purpose rectification where efficiency and space are important considerations.
Pinout
The BVSS84LT1G is a P-channel MOSFET. It typically comes in a SOT-23 package which has 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage difference between the gate and source allows current to flow from source to drain.
2. Source (S): This is the pin where the current enters the MOSFET. For a P-channel MOSFET, the source is usually connected to a higher voltage compared to the drain.
3. Drain (D): This is the pin where the current exits the MOSFET.
The BVSS84LT1G is commonly used for switching applications and low-power tasks in electronic circuits. It is designed to handle relatively low voltages and currents, making it suitable for applications like load switching in portable devices.
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage difference between the gate and source allows current to flow from source to drain.
2. Source (S): This is the pin where the current enters the MOSFET. For a P-channel MOSFET, the source is usually connected to a higher voltage compared to the drain.
3. Drain (D): This is the pin where the current exits the MOSFET.
The BVSS84LT1G is commonly used for switching applications and low-power tasks in electronic circuits. It is designed to handle relatively low voltages and currents, making it suitable for applications like load switching in portable devices.
Manufacturer
The BVSS84LT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in various sectors such as automotive, industrial, communications, computing, and consumer electronics. The company is well-regarded for its focus on energy-efficient solutions.
Application
The BVSS84LT1G is a small-signal MOSFET that is commonly used in various applications due to its compact size and efficiency. It is often utilized in switching applications, load switching, and level shifting in portable devices. Additionally, it can be found in power management circuits, DC-DC converters, and signal processing. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices where energy efficiency is crucial. Furthermore, this MOSFET is used in automotive systems, telecommunications, and consumer electronics for tasks such as driving low-power loads and interfacing logic signals.
Package
The BVSS84LT1G is a PNP bipolar junction transistor. It is typically available in a SOT-23 package type, which is a small, surface-mount package ideal for compact electronic designs.
