C2M0025120D

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C2M0025120D

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SICFET N-CH 1200V 90A TO247-3

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Especificações

Atributo Valor
Series Z-FET™
PartStatus Obsolete
BaseProductNumber C2M0025120
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 90A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 20V
RdsOn(Max)@Id,Vgs 34mOhm @ 50A, 20V
Vgs(th)(Max)@Id 2.4V @ 10mA
GateCharge(Qg)(Max)@Vgs 161 nC @ 20 V
Vgs(Max) +25V, -10V
InputCapacitance(Ciss)(Max)@Vds 2788 pF @ 1000 V
PowerDissipation(Max) 463W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3
Package TO-247-3
Packaging Tube

Visão Geral

Equivalent

The C2M0025120D is a 1200V SiC MOSFET from Wolfspeed. Equivalent products include:
- Infineon: IMZ120R045M1
- ROHM: SCT3040KL
- STMicroelectronics: SCTW35N120G2V
- ON Semiconductor: NTH4L020N120SC1
These alternatives offer similar voltage and current ratings, but always check datasheets for exact specifications and compatibility.

Features

The C2M0025120D is a 650V, 25A silicon carbide (SiC) Schottky diode from Cree (now Wolfspeed). Key features include:
- Low forward voltage drop (Vf): ~1.5V at 25A, reducing conduction losses.
- Zero reverse recovery current (Qrr): Enhances efficiency in high-frequency applications.
- High-temperature operation: Up to 175°C junction temperature.
- Fast switching: Minimizes switching losses in power converters.
- High surge current capability: Robust performance under transient conditions.
Ideal for power factor correction (PFC), solar inverters, and EV charging systems due to its efficiency and reliability.

Pinout

The C2M0025120D is a 1200V, 25mΩ silicon carbide (SiC) MOSFET from Wolfspeed in a TO-247-4L package.
- Pin Count: 4 pins (3 main terminals + 1 Kelvin source).
- Functions:
1. Gate (G): Controls switching.
2. Drain (D): High-voltage power connection.
3. Source (S): Power return path.
4. Kelvin Source (S_Kelvin): Reduces gate-loop inductance for better switching performance.
Designed for high-efficiency applications like EV chargers and power supplies.

Package

The C2M0025120D is a 1200V, 25mΩ SiC MOSFET from Wolfspeed, typically available in a TO-247-4L (4-lead) package. This package reduces switching losses and improves thermal performance compared to standard TO-247-3L. It's designed for high-power applications like EV chargers and industrial systems.

Frequently Asked Questions


Q: What is the maximum drain-source voltage rating for this SiC MOSFET?
A: The C2M0025120D features a drain-to-source voltage (Vdss) of 1200 V, suitable for high-voltage power conversion applications.


Q: What is the typical on-resistance at operating conditions?
A: The Rds(on) is a low 34 mOhm (max) at Vgs=20V and Id=50A, enabling high efficiency with minimal conduction losses.


Q: What gate drive voltage range is recommended?
A: The device uses a 20V nominal drive for lowest Rds(on), with a maximum Vgs rating of +25V and a -10V reverse capability.


Q: Is this device suitable for high-frequency switching designs?
A: Yes, with low gate charge (Qg=161 nC at 20V) and fast switching characteristics typical of SiC technology, it is ideal for high-frequency power supplies.


Q: What is the maximum continuous drain current at 25°C case temperature?
A: The rated continuous drain current (Id) is 90A at Tc=25°C, with a maximum power dissipation of 463W (Tc).


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