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C3M0021120K
+Lista de MateriaisSICFET N-CH 1200V 100A TO247-4L
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FabricanteWolfspeed, Inc.
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Peça do Fabricante #C3M0021120K
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Ficha Técnica C3M0021120K DataSheet
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Pacote TO-247-4
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Em Estoque6349
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | C3M™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 28.8mOhm @ 50A, 15V |
| Vgs(th)(Max)@Id | 3.6V @ 17.7mA |
| GateCharge(Qg)(Max)@Vgs | 162 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 4818 pF @ 1000 V |
| PowerDissipation(Max) | 469W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
Visão Geral
Description
The "C3M" prefix might indicate a series of SiC MOSFETs, which are known for their high thermal conductivity, high switching speeds, and improved efficiency over traditional silicon-based components. The numerical sequence "0021120K" likely provides specific information about the component's characteristics, such as its voltage rating, current capacity, or package type.
For precise details, it is recommended to refer to the manufacturer's datasheet or product catalog. This document will provide essential specifications, electrical characteristics, thermal properties, and application guidelines necessary for engineers and designers looking to integrate this component into their systems.
Equivalent
Features
1. Voltage Rating: It has a high voltage rating of 1200V, making it suitable for high-power applications.
2. Current Rating: The device supports a continuous current of up to 31A, offering robust performance for demanding applications.
3. Low On-Resistance: It features a low on-resistance of 21 mΩ, which minimizes conduction losses and enhances efficiency.
4. High Switching Speed: SiC technology allows for faster switching speeds compared to traditional silicon MOSFETs, improving overall system efficiency.
5. Thermal Performance: The SiC material provides superior thermal conductivity, enabling better heat dissipation and higher power density.
6. Efficiency: Enhanced efficiency makes it ideal for renewable energy systems, motor drives, and industrial applications.
7. Reliability: It offers increased reliability and a longer lifecycle due to the robust nature of SiC technology.
These features make the C3M0021120K well-suited for applications requiring high efficiency and performance under challenging conditions.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the output pin through which the main current flows. It is connected to the higher voltage end in the circuit.
3. Source (S): This pin is connected to the lower potential end and serves as the return path for the current flowing through the device.
The C3M0021120K is designed for high-efficiency power conversion applications, offering benefits like high switching speed, low on-resistance, and high thermal conductivity due to its SiC technology.
Manufacturer
Application
1. Renewable Energy Systems: Used in solar inverters and wind power converters for efficient energy conversion.
2. Electric Vehicles (EVs): Enhances efficiency in EV powertrains, onboard chargers, and charging stations.
3. Industrial Motor Drives: Improves performance and reduces losses in motor drive systems.
4. Power Supplies: Used in switch-mode power supplies (SMPS) for telecommunications and data centers.
5. Aerospace and Defense: Suitable for power management in avionics and other defense systems due to its high reliability and performance in harsh environments.
These areas benefit from the MOSFET's low switching losses and high thermal conductivity.