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C4D20120D
+Lista de MateriaisDIODE ARRAY SCHOTTKY 1200V TO247
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FabricanteWolfspeed, Inc.
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Peça do Fabricante #C4D20120D
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Ficha Técnica C4D20120D DataSheet
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Pacote TO-247
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Em Estoque4544
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | Z-Rec® |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io)(per Diode) | 16A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
Visão Geral
Description
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Introduction to C4D20120D
C4D20120D appears to be a specialized topic, possibly within a technical, academic, or industry-specific context. While specific details about it are not available, introductions to similar topics generally cover the key objectives, applications, and benefits it offers to its intended audience. For instance, if C4D20120D is a course code, the introduction would outline the syllabus, target skills, and prerequisite knowledge. If it's a technical product or software, the focus would be on its features, use cases, and user benefits. To gain a comprehensive understanding, consult specific course materials, product documentation, or reach out to knowledgeable sources who are directly involved with the topic.
For precise details, please provide additional context or refer to official resources related to C4D20120D.
Equivalent
1. Infineon's IDH20G120C5
2. STMicroelectronics' STPSC20H12C
3. ROHM's SCS220AG
These devices should be cross-verified for compatibility based on specific application requirements, such as reverse voltage and forward current ratings. Always consult datasheets to ensure precise matching.
Features
1. SiC Technology: Offers high thermal conductivity, enabling better heat dissipation and operation at higher temperatures compared to silicon diodes.
2. High Efficiency: Low forward voltage drop reduces power loss, enhancing overall system efficiency.
3. Fast Switching: Provides rapid switching speeds, beneficial for high-frequency applications, reducing energy losses and improving performance.
4. High Voltage and Current Rating: Suitable for high-power applications, typically found in power supplies and converters.
5. Robustness: Excellent thermal stability and resistance to high surge currents, ensuring reliability and longevity.
6. Reduced Reverse Recovery: Virtually eliminates reverse recovery time, minimizing electromagnetic interference (EMI) and improving system efficiency.
These features make the C4D20120D ideal for applications in renewable energy systems, power conversion, industrial drives, and automotive sectors.
Pinout
The function of this diode is to allow current to pass in one direction (forward direction) while blocking it in the opposite direction (reverse direction). Its key features include a high voltage rating of 1200V and a continuous forward current rating of 20A, making it suitable for high-power applications. The SiC technology offers lower switching losses and higher efficiency compared to traditional silicon diodes.
Manufacturer
Wolfspeed's products, including the C4D20120D, are widely used in sectors like renewable energy, electric vehicles, telecommunications, and industrial power supplies. The company, originally a part of Cree, Inc., became an independent entity focusing solely on power and radio frequency applications. Wolfspeed is recognized for its contributions to advancing power electronics and providing innovative solutions that enhance energy efficiency and performance in various electronic devices and systems.