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CL32B226KAJNFNE
+Lista de MateriaisCAP CER 22UF 25V X7R 1210
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FabricanteSamsung Electro-Mechanics
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Peça do Fabricante #CL32B226KAJNFNE
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Especificações
| Atributo | Valor |
| Series | CL |
| PartStatus | Active |
| Capacitance | 22 µF |
| Tolerance | ±10% |
| Voltage-Rated | 25V |
| TemperatureCoefficient | X7R |
| OperatingTemperature | -55°C ~ 125°C |
| Applications | General Purpose |
| MountingType | Surface Mount, MLCC |
| Package/Case | 1210 (3225 Metric) |
| Size/Dimension | 0.126" L x 0.098" W (3.20mm x 2.50mm) |
| Thickness(Max) | 0.106" (2.70mm) |
Visão Geral
Description
This capacitor is commonly used in decoupling, filtering, and energy storage applications within power supply circuits in consumer electronics, automotive, and industrial devices. Its small size and high capacitance make it suitable for applications where space is limited.
When selecting this capacitor for a project, consider its ESR (Equivalent Series Resistance), ESL (Equivalent Series Inductance), and temperature coefficient for optimal performance in your circuit design.
Equivalent
1. Hynix HMT112S6BFR8C-PB
2. Kingston KVR16LS11/2
3. Crucial CT2G3S1067M
4. Micron MT8JSF25664HZ-1G4D1
Always verify compatibility with your specific device or motherboard before purchasing.
Features
1. Capacity: 8GB, providing ample memory for multitasking and demanding applications.
2. Speed: Operates at a frequency of 2400 MHz, facilitating fast data transfer rates.
3. Timing: CL16 latency, which balances speed and efficiency for improved performance.
4. Form Factor: SO-DIMM, suitable for laptops and compact devices.
5. Voltage: 1.2V, ensuring energy efficiency and reduced power consumption compared to older DDR3 modules.
6. Compatibility: Designed to work with a wide range of systems that support DDR4 memory.
7. ECC Support: Often includes support for Error-Correcting Code (ECC), enhancing reliability in critical applications.
This module is suitable for gamers, professionals, and general users seeking to upgrade or enhance their system's performance.
Pinout
The primary function of this memory module is to provide high-speed data storage and retrieval for computer systems, enhancing overall performance for tasks such as gaming, professional applications, and multitasking. It operates at a voltage of 1.2V and has a memory speed of 2400 MT/s (megatransfers per second), adhering to the DDR4 standards.
This module is designed to be compatible with motherboards that support DDR4 memory, contributing to improved processing efficiency and system responsiveness.
Manufacturer
Samsung Electronics is recognized as one of the largest manufacturers of memory chips, including DRAM and NAND flash memory, and plays a crucial role in the global supply chain for electronic components. The CL32B226KAJNFNE specifically refers to a type of ceramic capacitor, often used in various electronic applications for filtering and energy storage purposes. Samsung’s commitment to innovation and technology has positioned it as a key player in the global electronics market, consistently pushing advancements in both hardware and software solutions across multiple industries.