CSD13202Q2

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CSD13202Q2

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MOSFET N-CH 12V 22A 6WSON

  • FabricanteTexas Instruments

  • Peça do Fabricante #CSD13202Q2

  • Pacote WSON-6

  • Em Estoque3530

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain(Id) @ 25°C 22A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 9.3mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id 1.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6.6 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 997 pF @ 6 V
Power Dissipation (Max) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)

Visão Geral

Description

"CSD13202Q2" appears to be a course code, likely for an introductory computer science or software development class (e.g., "CS" for Computer Science). While specifics may vary by institution, such courses typically cover foundational programming concepts (variables, loops, functions), problem-solving, and basic algorithms. Tools like Python, Java, or C++ are often used.
If this is part of a curriculum, check your syllabus or institution’s catalog for exact details—topics may include data structures, debugging, or software design principles. For clarity, confirm the full course title or description with your instructor or department.

Equivalent

The CSD13202Q2 is a 20V, 3.2mΩ N-channel MOSFET by Texas Instruments. Equivalent alternatives include:
- Infineon BSC010NE2LS5 (20V, 2.1mΩ)
- ON Semiconductor NTTFS4C05N (20V, 3.6mΩ)
- Vishay SiR874DP (20V, 3.7mΩ)
- STMicroelectronics STL120N4LF6 (20V, 2.0mΩ)
Check datasheets for exact compatibility in your application.

Features

The CSD13202Q2 is a 30V N-channel MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 2.2 mΩ (max at VGS = 10V), reducing conduction losses.
- High Current Handling: 100A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications.
- Low Gate Charge (QG): Enhances switching efficiency.
- Small Form Factor: PowerPAK® SO-8 package for space-constrained designs.
- Robust Protection: Avalanche-rated and improved thermal performance.
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.

Pinout

The CSD13202Q2 is a dual N-channel MOSFET in a 6-pin SON (2x2mm) package.
Pin Functions:
1. Pins 1 & 6: Drain (D) for each MOSFET (separate for dual-channel operation).
2. Pins 2 & 5: Gate (G) for each MOSFET (independent control).
3. Pins 3 & 4: Source (S), internally connected (common for both channels).
Key Features:
- 30V drain-source voltage (VDS).
- Low on-resistance (RDS(on)) for efficient power switching.
- Compact footprint for space-constrained designs.
Commonly used in load switching, power management, and DC-DC converters.

Manufacturer

The CSD13202Q2 is a dual N-channel MOSFET manufactured by Texas Instruments (TI). TI is a leading global semiconductor company specializing in analog and embedded processing technologies. Known for its innovation, TI produces a wide range of components, including power management ICs, microcontrollers, and sensors, serving industries like automotive, industrial, and consumer electronics. The company is recognized for its high-quality, reliable products and strong R&D focus.

Application

The CSD13202Q2 is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, H-bridge circuits.
4. Portable Devices – Smartphones, tablets (efficient power handling).
5. Automotive Systems – LED drivers, infotainment power control.
Its low on-resistance (RDS(on)) and compact DFN package make it ideal for space-constrained, high-efficiency applications.

Package

The CSD13202Q2 is a dual N-channel MOSFET in a DFN2020-6 (SOT-1120) package. This compact, leadless package measures 2.0mm x 2.0mm with a height of 0.6mm, ideal for space-constrained applications. It features a thermally enhanced design for efficient power dissipation.

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