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CSD17576Q5B
+Lista de MateriaisMOSFET N-CH 30V 100A 8VSON
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FabricanteTexas Instruments
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Peça do Fabricante #CSD17576Q5B
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Pacote TDFN-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 1.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 68 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4430 pF @ 15 V |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
Visão Geral
Description
Key specs:
- VDSS: 30V
- ID: 60A (continuous)
- RDS(on): 1.7mΩ (max at VGS = 10V)
- Package: 5x6mm SON (Q5B) for compact designs.
Its optimized gate charge (QG) reduces switching losses, enhancing performance in high-frequency circuits. Designed for automotive and industrial use, it meets AEC-Q101 standards for reliability.
For detailed specs, refer to TI’s datasheet (SLVSDX1).
Equivalent
- Infineon BSC093N04LS (30V, 9.3mΩ)
- Vishay SiR626DP (30V, 7.5mΩ)
- ON Semiconductor NVMFS5C404NL (40V, 4mΩ)
- TI CSD17573Q5B (30V, 8.8mΩ, similar series)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility.
Pinout
Pin Functions:
1. Gate (G) – Controls the switching.
2. Drain (D1, D2, D3) – Three drain pins for lower resistance and better thermal performance (internally connected).
4. Source (S) – Output/return path.
Key Features:
- 30V drain-source voltage (VDS)
- 60A continuous current (ID)
- Low RDS(on) (1.7mΩ max at VGS=10V)
- Optimized for high-efficiency power conversion (e.g., DC-DC, motor drives).
The multiple drain pins enhance current handling and heat dissipation.
