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CSD17579Q3A
+Lista de MateriaisMOSFET N-CH 30V 20A 8VSON
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FabricanteTexas Instruments
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Peça do Fabricante #CSD17579Q3A
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Pacote VSONP-8
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Em Estoque6106
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10.2mOhm @ 8A, 10V |
| Vgs(th)(Max) @ Id | 1.9V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 998 pF @ 15 V |
| Power Dissipation (Max) | 3.2W (Ta), 29W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (3x3.3) |
Visão Geral
Description
CSD17579Q3A is an identifier that might refer to a specific course, project, dataset, or code within a particular context or organization. Without more details, it's challenging to specify its exact nature. However, such identifiers are typically used to catalog and organize information in databases, educational platforms, or corporate systems. If it's a course, it might cover specialized topics related to a field such as computer science, data analysis, or similar disciplines. If it refers to a dataset or project, it could involve research or development within a specified domain. The best way to understand the specifics of CSD17579Q3A is to refer to the institution or context where it is used, as they would provide detailed descriptions, objectives, and related information. For precise details, examining the syllabus, project outline, or dataset description associated with this identifier is recommended.
Equivalent
The CSD17579Q3A is a N-channel MOSFET, typically used in power management applications. Equivalent products are other N-channel MOSFETs with similar specifications such as voltage rating, current capacity, Rds(on), and package type. Some equivalents include:
1. NXP PSMN2R0-30YLD
2. Infineon BSC030N03LS
3. Vishay SiR840DP
4. ON Semiconductor NTMFS4935N
Ensure to verify the specific application requirements and electrical characteristics before substitution.
1. NXP PSMN2R0-30YLD
2. Infineon BSC030N03LS
3. Vishay SiR840DP
4. ON Semiconductor NTMFS4935N
Ensure to verify the specific application requirements and electrical characteristics before substitution.
Pinout
The CSD17579Q3A is a power MOSFET from Texas Instruments, specifically a N-channel MOSFET designed for use in power management applications. It is packaged in a 3x3 mm SON (Small Outline No-lead) package, commonly referred to as a VSON package.
The pin count for the CSD17579Q3A is 8:
1. Pins 1, 2, 3: Source (S) - These pins are connected internally and serve as the source terminal for the MOSFET.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET’s state (on or off) by applying a voltage.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are connected internally and serve as the drain terminal for the MOSFET.
The primary function of the CSD17579Q3A is to act as a switch in power electronics, enabling efficient power conversion and management in various applications, such as DC-DC converters and load switches. Its high efficiency and low on-resistance make it suitable for high-performance applications.
The pin count for the CSD17579Q3A is 8:
1. Pins 1, 2, 3: Source (S) - These pins are connected internally and serve as the source terminal for the MOSFET.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET’s state (on or off) by applying a voltage.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are connected internally and serve as the drain terminal for the MOSFET.
The primary function of the CSD17579Q3A is to act as a switch in power electronics, enabling efficient power conversion and management in various applications, such as DC-DC converters and load switches. Its high efficiency and low on-resistance make it suitable for high-performance applications.
Manufacturer
The CSD17579Q3A is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and produces a wide range of electronic components. Founded in 1930 and headquartered in Dallas, Texas, TI is well-known for its development of analog and embedded processing products. These components are used in a variety of applications, including automotive, industrial, personal electronics, communications equipment, and enterprise systems. TI is a leader in innovation and technology in the semiconductor industry and is recognized for its contributions to advancing electronics and improving efficiency in various technological fields.
Application
The CSD17579Q3A is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in electronic applications requiring efficient power management and conversion. Key application areas include:
1. DC-DC Converters: Utilized in power supply circuits for voltage regulation.
2. Motor Control: Employed in automotive and industrial systems for driving motors efficiently.
3. Telecommunications: Used in power modules for network infrastructure.
4. Consumer Electronics: Found in devices like laptops and smartphones for battery management and power efficiency.
5. Renewable Energy Systems: Integrated into inverters for solar and wind energy applications.
These areas leverage the MOSFET's high efficiency, fast switching speeds, and low on-resistance.
1. DC-DC Converters: Utilized in power supply circuits for voltage regulation.
2. Motor Control: Employed in automotive and industrial systems for driving motors efficiently.
3. Telecommunications: Used in power modules for network infrastructure.
4. Consumer Electronics: Found in devices like laptops and smartphones for battery management and power efficiency.
5. Renewable Energy Systems: Integrated into inverters for solar and wind energy applications.
These areas leverage the MOSFET's high efficiency, fast switching speeds, and low on-resistance.
Package
The CSD17579Q3A is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically housed in a SON (Small Outline No-lead) package. This package type is designed for efficient thermal performance and compact size, making it suitable for high-frequency applications.
