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CSD18510Q5B
+Lista de MateriaisMOSFET N-CH 40V 300A 8VSON
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FabricanteTexas Instruments
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Peça do Fabricante #CSD18510Q5B
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Pacote TDFN-8
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Em Estoque4657
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 300A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 0.96mOhm @ 32A, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 153 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 11400 pF @ 20 V |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
Visão Geral
Description
Equivalent
1. Infineon: BSC320N20NS3G
2. ON Semiconductor: NTMFS5C628NL
3. Vishay: SiR662DP
4. STMicroelectronics: STL120N10F7
When choosing equivalents, verify parameters like voltage, current ratings, Rds(on), and package type to ensure compatibility with your application.
Features
Key features include:
1. Low On-Resistance: The MOSFET has a drain-source on-resistance (Rds(on)) that allows for efficient power management.
2. High Current Capability: It can handle significant drain current, making it suitable for power-intensive applications.
3. Fast Switching Speed: Designed for quick transitions, enhancing performance in high-speed circuits.
4. Compact Package: Available in a 5 mm x 6 mm SON package, which saves space on circuit boards.
5. Thermal Performance: Enhanced thermal characteristics allow for efficient heat dissipation.
This component is typically used in applications such as synchronous rectification, DC-DC converters, and motor drives, where reliable and efficient power management is critical.