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MOSFET N-CH 60V 12A/60A 8VSON
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FabricanteTexas Instruments
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Peça do Fabricante #CSD18543Q3AT
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Ficha Técnica CSD18543Q3AT DataSheet
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Especificações
| Atributo | Valor |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 15.6mOhm @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 30 V |
| Power Dissipation (Max) | 66W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (3x3.3) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | CSD18543 |
Visão Geral
Description
CSD18543Q3AT is a part of a series of integrated circuits, specifically a multi-cell battery management system. Designed for use in lithium-ion and lithium-polymer batteries, it provides essential functionalities for battery health and longevity. Key features include cell balancing, over-voltage and under-voltage protection, temperature monitoring, and communication capabilities for system diagnostics.
The device is typically used in applications such as electric vehicles, energy storage systems, and portable electronics. It ensures that each cell in a battery pack is charged and discharged evenly, preventing damage and extending the overall life of the battery. The integration of safety features helps to mitigate risks associated with battery failure, making it a critical component in modern battery management solutions.
In summary, CSD18543Q3AT plays a vital role in enhancing the performance and safety of battery systems in various applications.
The device is typically used in applications such as electric vehicles, energy storage systems, and portable electronics. It ensures that each cell in a battery pack is charged and discharged evenly, preventing damage and extending the overall life of the battery. The integration of safety features helps to mitigate risks associated with battery failure, making it a critical component in modern battery management solutions.
In summary, CSD18543Q3AT plays a vital role in enhancing the performance and safety of battery systems in various applications.
Equivalent
The CSD18543Q3AT is a NexFET power MOSFET. Equivalent products include the CSD18540Q3A, CSD18541Q3A, and other similar NexFETs with comparable specifications, such as RDS(on) and voltage ratings. Always verify electrical characteristics and package compatibility when considering alternatives.
Features
The CSD18543Q3AT is a high-performance Power MOSFET designed for various applications, including DC-DC converters, power management, and motor control. Key features include:
1. Low RDS(on): Provides efficient operation with minimal conduction losses.
2. High Voltage Rating: Typically rated for 40V, accommodating a wide range of applications.
3. Low Gate Charge (Qg): Enables faster switching speeds, improving efficiency in high-frequency applications.
4. Thermal Performance: Designed with a low thermal resistance, ensuring effective heat dissipation and reliable operation.
5. Compact Package: Housed in a PowerFLAT or similar surface-mount package, optimizing PCB space.
6. High Switching Speed: Suitable for applications requiring rapid on/off cycling, enhancing overall system performance.
These features make the CSD18543Q3AT ideal for modern power management designs in consumer electronics, automotive, and industrial sectors.
1. Low RDS(on): Provides efficient operation with minimal conduction losses.
2. High Voltage Rating: Typically rated for 40V, accommodating a wide range of applications.
3. Low Gate Charge (Qg): Enables faster switching speeds, improving efficiency in high-frequency applications.
4. Thermal Performance: Designed with a low thermal resistance, ensuring effective heat dissipation and reliable operation.
5. Compact Package: Housed in a PowerFLAT or similar surface-mount package, optimizing PCB space.
6. High Switching Speed: Suitable for applications requiring rapid on/off cycling, enhancing overall system performance.
These features make the CSD18543Q3AT ideal for modern power management designs in consumer electronics, automotive, and industrial sectors.
Pinout
The CSD18543Q3AT is a N-channel MOSFET from Texas Instruments with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to this gate turns the device on or off.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin connects to the ground (or negative side of the circuit) and is where the current enters the MOSFET.
The device is designed for applications such as power management and switching in various electronic circuits. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency designs.
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to this gate turns the device on or off.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin connects to the ground (or negative side of the circuit) and is where the current enters the MOSFET.
The device is designed for applications such as power management and switching in various electronic circuits. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency designs.
Manufacturer
The manufacturer of the CSD18543Q3AT is Texas Instruments (TI). Texas Instruments is a global semiconductor design and manufacturing company headquartered in Dallas, Texas. Founded in 1930, TI is renowned for its innovative analog and embedded processing solutions. The company produces a wide range of products, including calculators, microcontrollers, digital signal processors, and power management devices. TI serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on enhancing technology and improving the efficiency of electronic systems. The CSD18543Q3AT specifically is a power MOSFET designed for applications requiring efficient switching and power management, showcasing TI's commitment to advancing semiconductor technology.
Application
The CSD18543Q3AT is a high-performance power MOSFET primarily used in various applications such as DC-DC converters, synchronous rectification in power supplies, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for efficient power management in consumer electronics, industrial equipment, and automotive applications. Additionally, it is utilized in high-frequency switching applications and power distribution systems, contributing to improved energy efficiency and thermal performance in these systems.
Package
The CSD18543Q3AT is packaged in a 3mm x 3mm QFN (Quad Flat No-lead) format. This compact package type is designed for efficient thermal performance and minimal space requirements in electronic applications.
