CSD19536KTT

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CSD19536KTT

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MOSFET N-CH 100V 200A DDPAK

  • FabricanteTexas Instruments

  • Peça do Fabricante #CSD19536KTT

  • Pacote D2PAK-3

  • Em Estoque5424

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 200A (Ta)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 2.4mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 153 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 12000 pF @ 50 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3

Visão Geral

Description

The CSD19536KTT is a 100V N-channel MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features:
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) at 10V, reducing conduction losses.
- High Current Handling: Up to 120A continuous drain current.
- Fast Switching: Optimized for applications like motor drives, DC-DC converters, and power supplies.
- Robust Packaging: TO-263 (D2PAK) for thermal efficiency and mechanical durability.
Ideal for automotive, industrial, and computing systems requiring high power density and reliability.

Features

The CSD19536KTT is a 100V N-channel MOSFET by Texas Instruments with the following key features:
- Low On-Resistance (RDS(on)): 3.6 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: 120A continuous drain current (ID) at 25°C.
- Fast Switching: Optimized for high-frequency applications.
- Low Gate Charge (Qg): 63nC (typ), improving efficiency in switching circuits.
- Robust Package: 8mm x 9.7mm PowerPAD™ SO-8 (D2PAK), enhancing thermal performance.
- Avalanche Energy Rated: Improves reliability in inductive load applications.
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.

Application

The CSD19536KTT, a 100V N-channel MOSFET by Texas Instruments, is widely used in:
1. Power Supplies – Efficient DC-DC converters and voltage regulation.
2. Motor Control – Drives in automotive, industrial, and robotics.
3. Battery Management – Protection circuits in EVs and portable devices.
4. Load Switching – Fast switching in industrial and consumer electronics.
5. Solar Inverters – Energy conversion in renewable systems.
Its low on-resistance (3.6mΩ) and high current handling (195A) make it ideal for high-efficiency, high-power applications.

Package

The CSD19536KTT is a 100V N-channel MOSFET from Texas Instruments, available in a TO-263 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance with a metal tab for heat dissipation. It is commonly used in power supplies, motor drives, and DC-DC converters.

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