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CY62167EV30LL-45BVXI
+Lista de MateriaisIC SRAM 16MBIT PARALLEL 48VFBGA
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FabricanteCypress Semiconductor Corp
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Peça do Fabricante #CY62167EV30LL-45BVXI
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Ficha Técnica CY62167EV30LL-45BVXI DataSheet
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Pacote PG-VFBGA-48
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tray |
| Series | MoBL® |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Mb (2M x 8, 1M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The device features a standard TTL-compatible I/O interface and is equipped with a Data Retention mode, ensuring data integrity even when the device is not actively powered. It supports unlimited read/write cycles, which enhances its durability for applications requiring frequent data updates. The CY62167EV30LL-45BVXI comes in a 48-pin TSOP I package and is designed to operate over an industrial temperature range of -40°C to 85°C, making it reliable for a variety of environmental conditions. Its efficient power consumption and robust performance make it an ideal choice for use in applications such as industrial control systems, automotive electronics, and communication devices.
Equivalent
1. Alliance Memory AS6C1616-55BIN - 16 Mb (1M x 16) low-power SRAM.
2. ISSI IS61WV102416BLL - 16 Mb (1M x 16) low-power asynchronous SRAM.
3. Renesas RMLV1616EGSB-4S2 - 16 Mb (1M x 16) low power SRAM.
These chips offer comparable features in terms of memory capacity, power consumption, and performance.
Features
1. Capacity: 16 Mbit organized as 1M x 16 bits.
2. Voltage Supply: Operates within a voltage range of 2.2V to 3.6V.
3. Low Power Consumption: Supports low standby power consumption, making it ideal for battery-powered applications.
4. Access Time: Fast access time of 45 ns, ensuring quick read and write operations.
5. Data Retention: Designed for data retention at a minimum voltage of 1.5V.
6. Temperature Range: Industrial temperature range from -40°C to +85°C, suitable for harsh environmental conditions.
7. Package: Available in a 48-pin TSOP (Thin Small Outline Package), which is space-efficient for various applications.
8. Pin Compatibility: Compatible with other standard low-power SRAMs, allowing easy migration and system integration.
These features make the CY62167EV30LL-45BVXI a versatile choice for applications requiring reliable and efficient memory storage, such as in telecommunications, networking, and consumer electronics.
Pinout
- Address Pins (A0-A19): These 20 pins are used to input the address for memory access.
- Data Input/Output Pins (I/O0-I/O15): These 16 pins are used for data input and output.
- Chip Enable Pins (CE1 and CE2): These are used to enable or disable the chip.
- Output Enable Pin (OE): This pin controls the output buffer.
- Write Enable Pin (WE): This pin is used to enable writing to the memory.
- Byte High Enable (BHE) and Byte Low Enable (BLE): These pins are used to select the high or low byte when accessing the memory.
- Power Supply (VCC) and Ground (VSS): Power and ground connections for the chip.
This chip is designed for low-power applications and operates with a 3.0V supply voltage. It features high-speed access times, making it suitable for various applications requiring fast and reliable memory.
Manufacturer
Infineon Technologies, the parent company since acquiring Cypress in 2020, is a German semiconductor manufacturer. It is one of the top players in the semiconductor industry and specializes in automotive, industrial, and security electronics. Infineon's product offerings include microcontrollers, power semiconductors, sensors, and digital security solutions. The acquisition of Cypress expanded Infineon's portfolio, particularly in the areas of connectivity and computing, making it a comprehensive provider of semiconductor solutions for a wide range of applications.