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CY7C1370D-167AXC
+Lista de MateriaisIC SRAM 18MBIT PAR 100TQFP
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FabricanteTecnologias Infineon
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Peça do Fabricante #CY7C1370D-167AXC
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Especificações
| Atributo | Valor |
| Series | NoBL™ |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 18Mbit |
| Memory Organization | 512K x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Access Time | 3.4 ns |
| Voltage - Supply | 3.135V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x20) |
| Base Product Number | CY7C1370 |
Visão Geral
Description
Key features include a wide operating voltage range of 2.7V to 3.6V, which allows for flexibility in various systems. It supports asynchronous read and write operations, facilitating ease of integration into existing designs. The device also includes a burst mode for efficient data transfer, enhancing performance in high-demand scenarios.
With a 54-pin TSOP II package, the CY7C1370D-167AXC is compact and provides good thermal and electrical performance. Overall, this SRAM solution is well-suited for applications that require reliable, high-speed data storage and processing capabilities.
Equivalent
1. IS61WV51216BLL-167B3 (ISSI)
2. MT48LC16M16A2P-75 (Micron)
3. K4S281632H-667 (Samsung)
4. IDT71V36100S75 (Integrated Device Technology)
Always verify specific parameters like package type, timing, and voltage to ensure compatibility.
Features
1. Density: 1 Mbit (128K x 8).
2. Access Time: 167 ns, allowing for quick data retrieval.
3. Interface: Parallel interface for easy integration with various systems.
4. Operating Voltage: Typically operates at 2.5V or 3.3V, ensuring low power consumption.
5. Package Type: Available in a 44-pin TSOP II package, suitable for space-constrained applications.
6. Asynchronous Read/Write: Allows for simple control and flexibility in data handling.
7. Low Power: Designed for low standby and active power consumption.
8. Durability: Supports a high number of read/write cycles, making it reliable for demanding applications.
This SRAM is ideal for applications requiring fast, temporary storage, such as networking equipment, telecommunications, and industrial control systems.
Pinout
Key functions of the pins include:
1. Data Inputs/Outputs: DQ0-DQ17 (18 pins) for data.
2. Address Inputs: A0-A17 (18 pins) for addressing the memory locations.
3. Control Signals:
- WE (Write Enable) to control write operations.
- OE (Output Enable) to control data output.
- CE (Chip Enable) to activate the chip.
- LB (Lower Byte Enable) and UB (Upper Byte Enable) to control byte access.
4. Power and Ground: VCC and GND pins for power supply.
5. Additional Control Pins:
- WEN (Write Enable for the secondary port).
- R/W (Read/Write control).
- DPA (Data Port A) and DPB (Data Port B) for dual-port operations.
The device operates at 167 MHz speed, providing high-performance data access.