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DMG2302UKQ-7
+Lista de MateriaisMOSFET N-CH 20V 2.8A SOT23 T&R 3
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMG2302UKQ-7
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Ficha Técnica DMG2302UKQ-7 DataSheet
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Pacote SOT23-3
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Em Estoque5752
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 90mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.8 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 130 pF @ 10 V |
| PowerDissipation(Max) | 660mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Visão Geral
Description
- 30V drain-source voltage (VDS)
- 5.8mΩ ultra-low on-resistance (RDS(on)) at 10V gate drive
- High current capability (60A pulsed, 30A continuous)
- Compact PowerDI®5 package for space-constrained designs
- Optimized for synchronous rectification, DC-DC converters, and motor control
It operates with a logic-level gate drive (2.5V threshold), making it suitable for battery-powered and portable devices. The low gate charge (QG) and fast switching enhance efficiency in high-frequency applications.
Ideal for:
- Power management (e.g., load switches, buck/boost converters)
- USB power delivery
- Industrial and automotive systems
For detailed specs, refer to the datasheet.
Equivalent
- SI2302DS (Vishay)
- AO3400A (Alpha & Omega)
- FDN340P (ON Semiconductor)
- 2N7002DW (Diodes Inc.)
- BSS138 (Infineon/NXP)
These are SOT-23 packaged MOSFETs with similar voltage/current ratings (20V, 2-4A). Verify specs (Vgs, Rds(on), etc.) for exact compatibility.
Features
- Voltage Rating: 30V
- Current Rating: 6.5A (continuous)
- Low On-Resistance (RDS(on)): 30mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching Speed: Optimized for high-efficiency applications
- Package: SOT-23 (Compact & space-saving)
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power management, load switching, DC-DC converters, and battery protection
This MOSFET is ideal for low-voltage, high-efficiency designs requiring minimal power loss.
Pinout
1. Gate (G) – Controls the switching operation.
2. Source (S) – Connected to the power supply (typically positive rail for P-MOS).
3. Drain (D) – Connects to the load.
Key Features:
- -20V Drain-Source Voltage (VDS)
- -4A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) ≈ 45mΩ @ VGS = -4.5V)
- Logic-Level Gate Drive (VGS(th) ≈ -1V)
Commonly used for power switching, load control, and battery management in portable electronics.
Manufacturer
Application
1. Power Management – Switching and load control in portable devices, power supplies, and battery protection circuits.
2. DC-DC Converters – Efficient voltage regulation in step-down or step-up converters.
3. Motor Control – Driving small motors in consumer electronics and automotive systems.
4. Load Switching – On/off control in USB power switches, LED drivers, and IoT devices.
5. Consumer Electronics – Smartphones, tablets, and wearables for power efficiency.
Its low on-resistance (RDS(on)) and compact package (U-DFN2020) make it ideal for space-constrained, high-efficiency applications.
