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TRANS 2PNP 150V 0.2A SOT26
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMMT5401-7-F
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Ficha Técnica DMMT5401-7-F DataSheet
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Pacote SOT-23-6
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Em Estoque4114
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 2 PNP (Dual) Matched Pair |
| Current - Collector(Ic)(Max) | 200mA |
| Voltage - Collector Emitter Breakdown(Max) | 150V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 300mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
1. Overview: The course typically provides an introduction to its core topics and objectives. This could include an exploration of methodologies, theories, or practices relevant to the subject matter.
2. Learning Outcomes: Students can expect to gain knowledge and skills applicable to the field, possibly involving critical thinking, analysis, and practical application.
3. Structure: The course may be divided into lectures, seminars, or practical sessions, and could include assessments such as exams, projects, or assignments.
4. Resources: Required readings, textbooks, and online resources are usually outlined to support the learning experience.
5. Prerequisites: Any prior knowledge or courses needed before taking this module might be specified.
To provide more precise information, additional context about the institution or subject area is necessary.
Equivalent
1. BC847B - A commonly used NPN transistor with similar characteristics.
2. MMBT5401 - Another variant with similar specifications.
3. BC817 - Offers similar functionality in small signal applications.
4. 2N3904 - Functionally similar for general-purpose applications.
When replacing, consider checking specific parameters like voltage, current, and package type to ensure compatibility with your application.
Features
1. Dual MOSFET Configuration: Contains two N-channel MOSFETs, allowing for compact circuit designs and reducing the need for multiple discrete components.
2. Low On-Resistance: Features a low R_DS(on), which minimizes power loss and improves efficiency during operation.
3. High-Speed Switching: Provides fast switching speeds, making it suitable for applications that require quick response times.
4. Compact Package: Available in a small SOT-23 package, which is ideal for space-constrained applications and contributes to a reduced overall circuit footprint.
5. Enhancement Mode: Operates in enhancement mode, which means it is normally off when the gate-source voltage is zero, ensuring low power consumption when inactive.
6. Wide Range of Applications: Suitable for use in power management, load switching, and signal processing in various electronic devices.
These features make the DMMT5401-7-F a versatile choice for designers looking to implement efficient and compact MOSFET solutions in their electronic projects.
Pinout
1. Collector 1 - The collector for the first transistor.
2. Base 1 - The base for the first transistor.
3. Emitter 1 - The emitter for the first transistor.
4. Collector 2 - The collector for the second transistor.
5. Base 2 - The base for the second transistor.
6. Emitter 2 - The emitter for the second transistor.
This configuration allows the DMMT5401-7-F to be used for various amplification and switching applications where dual NPN transistors are needed.