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DMN2400UV-7
+Lista de MateriaisMOSFET 2N-CH 20V 1.33A SOT563
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMN2400UV-7
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Ficha Técnica DMN2400UV-7 DataSheet
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Pacote SOT-666
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Especificações
| Atributo | Valor |
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 1.33A |
| RdsOn(Max)@IdVgs | 480mOhm @ 200mA, 5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 36pF @ 16V |
| Power-Max | 530mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
Visão Geral
Description
Key features of the DMN2400UV-7 may include:
1. Low On-Resistance: This allows for efficient current flow and reduces power loss, enhancing the overall performance of electronic devices.
2. Fast Switching Speed: Enables quick response times, which is crucial for applications requiring high-speed operation.
3. Compact Package: Often available in a small form factor, which is ideal for space-constrained applications.
4. Enhanced Thermal Performance: Can handle higher power levels while maintaining stable operation.
The DMN2400UV-7 is typically utilized in devices that require efficient power usage and space-saving components, making it a versatile choice in modern electronic designs.
Equivalent
1. BSN20 - NXP Semiconductors
2. FDN340P - ON Semiconductor
3. 2N7002 - NXP Semiconductors
4. 2SK3018 - Toshiba
5. IRLML2402 - Infineon
These alternatives have similar specifications but should be cross-checked for specific applications and parameters. Always refer to the datasheets for compatibility.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: The device offers a drain-source voltage (V_DS) of 20V.
3. Current Rating: It can handle continuous drain current (I_D) up to 1.6A.
4. R_DS(on): It has a low on-state resistance, typically around 0.09 ohms, which improves efficiency.
5. Gate Voltage: Operates typically with a gate threshold voltage (V_GS) around 1V to 3V.
6. Package Type: Comes in a compact SOT-23 package, suitable for high-density PCB designs.
7. Thermal Management: Its design allows efficient heat dissipation, supporting performance stability.
8. Applications: Ideal for load switches, power management in portable devices, DC-DC converters, and more.
These features make the DMN2400UV-7 a versatile component in various electronic applications, especially where space and efficiency are critical.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate pin allows current to flow between the drain and source.
2. Source (S): This pin is where the charge carriers (usually electrons in an N-channel MOSFET) enter the MOSFET. The source is typically connected to the ground in N-channel configurations.
3. Drain (D): This pin is where the charge carriers exit the MOSFET. The drain is typically connected to the load in a switching application.
These pins facilitate the basic operation of the MOSFET, allowing it to act as an electronic switch or amplifier in various circuit applications.