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DMN601K-7
+Lista de MateriaisMOSFET N-CH 60V 300MA SOT23-3
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMN601K-7
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Ficha Técnica DMN601K-7 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Visão Geral
Description
In general, introductory courses cover key concepts, terminology, and basic principles relevant to the field. They are designed to equip students with the necessary skills and knowledge to advance to more specialized or in-depth topics.
If DMN601K-7 is related to a specific discipline, it might include a syllabus outlining objectives, learning outcomes, assessment methods, and required readings or resources. For precise details, such as course content and structure, it would be best to consult the academic catalog or course guide provided by the relevant educational institution offering this course.
Equivalent
Features
1. Low On-Resistance: Offers low RDS(on), which minimizes power loss and enhances efficiency in power delivery applications.
2. Compact Package: Available in a small package, making it suitable for compact designs and space-constrained applications.
3. High Speed Switching: Capable of fast switching speeds, which is beneficial for applications requiring quick response times.
4. Thermal Performance: Designed for improved thermal efficiency, allowing it to handle higher power levels without overheating.
5. Automotive Applications: Suitable for automotive use due to its reliability and adherence to industry standards.
6. Low Gate Charge: Features a low gate charge, which reduces the drive requirements from the control circuitry, thereby saving energy.
7. Enhanced Durability: Withstands high levels of stress, making it robust in various operating conditions.
The DMN601K-7 is ideal for applications in power management, automotive electronics, and other environments where efficient power handling in a small form factor is needed.
Pinout
The pin functions of the DMN601K-7 are as follows:
1. Gate (G): This is the control terminal and is used to turn the MOSFET on or off by applying the appropriate voltage.
2. Source (S): This terminal is connected to the ground or the negative voltage rail in most applications. It is the source of charge carriers (electrons for an N-channel MOSFET).
3. Drain (D): This terminal is where the load is connected. When the MOSFET is on, current flows from the drain to the source (for an N-channel MOSFET).
The DMN601K-7 is an N-channel enhancement mode MOSFET, and it is typically used in applications such as load switching, low-voltage DC-DC converters, and general-purpose switching.