DMN6075S-7

Imagens apenas para referência

DMN6075S-7

+Lista de Materiais

MOSFET N-CH 60V 2A SOT23

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 2A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 85mOhm @ 3.2A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 12.3 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 606 pF @ 20 V
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

Visão Geral

Description

The DMN6075S-7 is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Low on-resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- High current capability: Suitable for demanding loads.
- Fast switching speed: Ideal for high-frequency circuits.
- Compact package (e.g., TO-252): Space-saving and easy to mount.
Common uses include DC-DC converters, motor control, and power management in consumer electronics, automotive systems, and industrial equipment.
For detailed specs, refer to the datasheet for voltage/current ratings, thermal characteristics, and application notes.

Features

The DMN6075S-7 is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): Typically 7.0mΩ at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), suitable for surface mounting
- Gate Drive Voltage (VGS): ±20V max, with a recommended 10V for full enhancement
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves reliability in rugged conditions
Ideal for power management in DC-DC converters, motor control, and battery protection circuits.

Manufacturer

The DMN6075S-7 is a power MOSFET manufactured by Diodes Incorporated, a global semiconductor company specializing in high-performance discrete, analog, and mixed-signal products. Diodes Incorporated focuses on power management, signal integrity, and efficiency solutions for consumer electronics, computing, communications, and industrial applications. Known for cost-effective and reliable components, the company serves a broad range of industries with innovation-driven semiconductor solutions.

Application

The DMN6075S-7 is a power MOSFET commonly used in:
1. Power Supplies – Efficient switching in DC-DC converters and SMPS.
2. Motor Control – Drives and controls motors in automotive and industrial systems.
3. LED Lighting – Enhances performance in LED drivers.
4. Battery Management – Used in protection circuits and power distribution.
5. Automotive Electronics – Supports applications like electric power steering and infotainment systems.
Its low on-resistance and high-speed switching make it ideal for energy-efficient, compact designs.

Package

The DMN6075S-7 is a N-channel MOSFET in a TO-252 (DPAK) surface-mount package. It features a compact design with a tab for heat dissipation, making it suitable for power applications. Key specs include 60V drain-source voltage, 75A continuous drain current, and low on-resistance. Commonly used in power management, motor control, and switching circuits.

Produtos relacionados a DMN6075S-7

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para DMN6075S-7 Use este formulário. Responderemos em até 12 horas.