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DMN61D9UDW-7
+Lista de MateriaisMOSFET 2N-CH 60V 0.35A
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMN61D9UDW-7
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Pacote TSSOP-6
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Em Estoque3397
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 350mA |
| Rds On(Max) @ Id Vgs | 2Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.4nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 28.5pF @ 30V |
| Power - Max | 320mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
DMN61D9UDW-7 could denote a specialized component, such as a semiconductor device, integrated circuit, or electronic module, used in various applications like computing, telecommunications, or consumer electronics. Typically, such models are part of product lines offered by electronics manufacturers and may feature advanced specifications like increased efficiency, enhanced performance, or unique functionalities catering to specific technical requirements.
Understanding DMN61D9UDW-7 requires examining its datasheet, which provides detailed information on its electrical characteristics, mechanical dimensions, and potential applications. Users can leverage this data to integrate the component into designs, ensuring compatibility with existing systems and achieving desired operational outcomes. For more precise details, consulting the manufacturer's official documentation or support channels is recommended, as they will provide authoritative and comprehensive insights tailored to the component's intended use.
Equivalent
1. SI2302DS - by Vishay
2. FDG6323C - by onsemi
3. NDS331N - by Fairchild (onsemi)
4. BSS138 - by Nexperia
These equivalents should match key parameters such as voltage ratings, current capability, and package type to ensure compatibility. Always verify the datasheet for precise matching.
Features
1. Dual N-Channel Configuration: It includes two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.
2. Low On-Resistance: The device offers low RDS(on), which reduces power loss and improves efficiency in applications such as power management and motor control.
3. Small Package: Typically available in a compact package like the DFN or SOT-363, allowing for high-density circuit designs.
4. Fast Switching Speed: Provides quick switching capabilities, which is crucial for high-frequency applications.
5. Thermal Performance: Designed to handle significant power loads with efficient heat dissipation properties.
6. Robust Design: Built to withstand high currents and voltages, providing reliability in demanding environments.
7. Wide Operating Range: Suitable for a variety of applications due to its wide operating voltage and current range.
These features make the DMN61D9UDW-7 a versatile choice in applications requiring efficient, compact, and reliable power management solutions.
Pinout
The primary function of the DMN61D9UDW-7 is to serve as a switch or amplifier in electronic circuits. Being a dual N-channel device, it contains two identical MOSFETs within the same package, allowing it to handle two separate signals or provide added flexibility in circuit design. This makes it suitable for various applications, including load switching, power management, and signal amplification in portable and battery-powered devices.
The DMN61D9UDW-7 is designed for low voltage and low current applications, with a typical drain-source voltage (V_DS) rating of around 60V and a continuous drain current (I_D) of about 200mA per channel. Its small size and efficient operation make it an excellent choice for space-constrained applications.