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DMN65D8LDW-7
+Lista de MateriaisMOSFET 2N-CH 60V 0.18A SOT363
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FabricanteDiodes Incorporated
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Peça do Fabricante #DMN65D8LDW-7
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Ficha Técnica DMN65D8LDW-7 DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | DMN65 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 115mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
Key specifications include a low drain-source on-state resistance, which minimizes power loss and ensures high efficiency. The DMN65D8LDW-7 operates at a maximum drain-source voltage of 60V and can handle a continuous drain current up to 4.3A, making it suitable for various applications such as load switching and DC-DC conversion.
This MOSFET comes in a compact DFN2020-6 package, which is ideal for space-constrained PCBs. The package also offers excellent thermal performance, ensuring reliable operation in demanding environments. With its high-speed switching capabilities and low gate charge, the DMN65D8LDW-7 is designed to optimize power efficiency and enhance the overall performance of electronic systems.
Overall, the DMN65D8LDW-7 is a versatile and efficient component that can be an asset in designing modern electronic devices.
Equivalent
1. Nexperia BUK9MNN-65DL
2. ON Semiconductor NTD5804N
3. Infineon BSC067N06LS3G
4. Vishay Si1466DH
These alternatives should have comparable voltage and current ratings, but it's essential to verify specific parameters like Rds(on), Vgs(th), and package type to ensure compatibility with your application.
Features
1. Dual N-Channel MOSFETs: It contains two N-channel MOSFETs in a single package, offering convenience and space-saving on PCBs.
2. Low On-Resistance: The device exhibits low on-resistance, which contributes to enhanced efficiency and reduced power loss.
3. Compact Package: Housed in a small, surface-mountable package, it is suitable for high-density circuit designs.
4. High-Speed Switching: The MOSFETs support fast switching speeds, which is beneficial for applications requiring rapid transitions.
5. Enhancement Mode: These are enhancement-mode MOSFETs, which means they are normally off when the gate-source voltage is zero and turn on when a positive voltage is applied.
6. Thermal Performance: The package design and materials facilitate effective heat dissipation, improving thermal performance.
7. Applications: The DMN65D8LDW-7 is typically used in DC-DC converters, power management, load switching, and other applications where efficient switching is essential.
These features make it suitable for modern electronic applications demanding efficiency and compact design.
Pinout
1. Pin Count: 6 pins
2. Function:
- Pins 1 & 4: Source (S1 and S2) - These pins are the source terminals for each N-channel MOSFET.
- Pins 2 & 5: Gate (G1 and G2) - These pins are the gate terminals for controlling each MOSFET.
- Pins 3 & 6: Drain (D1 and D2) - These pins are the drain terminals for each MOSFET.
The DMN65D8LDW-7 is designed for switching applications, providing efficient performance due to its low on-resistance and fast switching speeds. It is commonly used in applications like load switches, power management, and other digital circuits requiring efficient switching.