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DNBT8105-7
+Lista de MateriaisTRANS NPN 60V 1A SOT23-3
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FabricanteDiodes Incorporated
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Peça do Fabricante #DNBT8105-7
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Ficha Técnica DNBT8105-7 DataSheet
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Pacote TO-236-3
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Em Estoque24494
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Especificações
| Atributo | Valor |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 500mA, 5V |
| Power - Max | 600 mW |
| Frequency - Transition | 150MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Equivalent
Features
1. Bluetooth Capability: Often includes Bluetooth for wireless connectivity, supporting versions like Bluetooth 4.2, 5.0, or higher, enabling efficient data transmission.
2. Range and Signal Strength: Designed to offer a substantial range for connectivity with robust signal strength, ensuring stable connections.
3. Low Power Consumption: Engineered to consume minimal power, making it suitable for battery-operated devices and IoT applications.
4. Compatibility: Supports integration with various devices and operating systems, providing flexibility in usage across different platforms.
5. Size and Form Factor: Usually compact, allowing for easy integration into small devices without sacrificing performance.
6. Security Features: Includes security protocols to ensure secure data transmission and protect against unauthorized access.
7. Data Rate: Capable of supporting high data rates for faster data transfer, making it suitable for applications requiring quick communication.
8. Temperature Range: Often designed to operate efficiently across a wide temperature range, suitable for both consumer and industrial applications.
Note that specific features may vary based on the manufacturer and the intended application of the DNBT8105-7.
Pinout
The functions of the pins are generally as follows:
- Two pins for the collector connections of the two NPN transistors.
- Two pins for the base connections.
- Two pins for the emitter connections.
Each transistor within the package functions independently, allowing for dual amplification or switching operation in a compact form factor. This configuration is particularly useful in applications where board space is limited and dual transistor functionality is required. The device is suitable for general-purpose amplification and high-speed switching. Always refer to the specific datasheet for exact pin configuration and electrical characteristics.
Manufacturer
Application
1. Power Electronics: Utilized in managing and converting electrical power in devices like converters and inverters.
2. Motor Drives: Essential for controlling motor speeds and torque in industrial machinery.
3. Renewable Energy Systems: Applied in the control systems of solar inverters and wind turbines.
4. Smart Grids: Used for efficient energy distribution and management.
5. Automotive Electronics: Integrated into systems for enhancing vehicle performance and energy efficiency.
6. Aerospace and Defense: Supports high-reliability operations in avionics and defense systems.
These applications benefit from the component's efficiency, reliability, and versatility.