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FCPF190N60
+Lista de MateriaisMOSFET N-CH 600V 20.2A TO220F
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Fabricanteonsemi
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Peça do Fabricante #FCPF190N60
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Ficha Técnica FCPF190N60 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | SuperFET® II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 199mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 74 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2950 pF @ 25 V |
| Power Dissipation (Max) | 39W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
Visão Geral
Description
The FCPF190N60 is a type of Insulated Gate Bipolar Transistor (IGBT), a semiconductor device used in electronic circuits for efficient power switching and amplification. It is designed to handle high voltages and currents, making it suitable for applications like inverters, motor drives, and power converters. The "FCPF" denotes the family or series, while the "190N60" signifies its specific electrical characteristics: "190" refers to its current rating or ampacity, and "60" indicates its voltage capacity, typically 600 volts.
Key features of the FCPF190N60 include high-speed switching, low on-state voltage drop, and robust thermal performance, which contribute to greater efficiency and reduced energy losses in power systems. Its compact design helps in minimizing the size of the power modules in which it's used. Engineers and designers often choose this IGBT for its reliability and effectiveness in high-power applications, allowing for optimized performance in demanding environments.
Key features of the FCPF190N60 include high-speed switching, low on-state voltage drop, and robust thermal performance, which contribute to greater efficiency and reduced energy losses in power systems. Its compact design helps in minimizing the size of the power modules in which it's used. Engineers and designers often choose this IGBT for its reliability and effectiveness in high-power applications, allowing for optimized performance in demanding environments.
Equivalent
The FCPF190N60 is a 600V, 19A SuperFET2 Power MOSFET. Equivalent products with similar specifications might include:
1. STMicroelectronics STP19NM60N - a 600V, 19A MOSFET.
2. Infineon IPP60R190P6 - another 600V MOSFET with a comparable current rating.
3. ON Semiconductor FDPF190N60 - with similar voltage and current ratings.
Always confirm specific parameters such as package type, Rds(on), and thermal characteristics for compatibility.
1. STMicroelectronics STP19NM60N - a 600V, 19A MOSFET.
2. Infineon IPP60R190P6 - another 600V MOSFET with a comparable current rating.
3. ON Semiconductor FDPF190N60 - with similar voltage and current ratings.
Always confirm specific parameters such as package type, Rds(on), and thermal characteristics for compatibility.
Features
The FCPF190N60 is a high-performance power MOSFET designed primarily for use in switching applications. Key features include:
1. Voltage Rating: It typically offers a high voltage rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous current of approximately 190A, supporting high current load applications.
3. RDS(on): The drain-source on-resistance is relatively low, which minimizes conduction losses and improves efficiency.
4. Fast Switching: It features fast switching capabilities, which is beneficial for high-speed applications and enhances efficiency.
5. Package: Often available in a TO-220 or TO-247 package, providing efficient heat dissipation.
6. Enhanced Robustness: The MOSFET is designed to withstand high-energy pulses in the avalanche and commutation mode.
7. Applications: Commonly used in power supply circuits, motor controllers, and other power conversion systems.
These features make the FCPF190N60 a versatile choice for designers working with high-power and high-efficiency systems.
1. Voltage Rating: It typically offers a high voltage rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous current of approximately 190A, supporting high current load applications.
3. RDS(on): The drain-source on-resistance is relatively low, which minimizes conduction losses and improves efficiency.
4. Fast Switching: It features fast switching capabilities, which is beneficial for high-speed applications and enhances efficiency.
5. Package: Often available in a TO-220 or TO-247 package, providing efficient heat dissipation.
6. Enhanced Robustness: The MOSFET is designed to withstand high-energy pulses in the avalanche and commutation mode.
7. Applications: Commonly used in power supply circuits, motor controllers, and other power conversion systems.
These features make the FCPF190N60 a versatile choice for designers working with high-power and high-efficiency systems.
Pinout
The FCPF190N60 is a power MOSFET, specifically designed for high-efficiency power conversion applications. It is produced by Fairchild Semiconductor, which is now part of the ON Semiconductor brand.
The FCPF190N60 typically comes in a TO-220 package, which is a standard through-hole package for power semiconductors. This package generally has three pins:
1. Gate (G): This pin is where the input signal is applied to control the MOSFET. It regulates the flow of current between the drain and the source.
2. Drain (D): This is the pin through which the main current flows into the MOSFET when it is in the 'on' state.
3. Source (S): The current flows out through this pin when the MOSFET is conducting.
These pins are integral for switching applications, where the gate voltage controls the state of the MOSFET and determines whether current flows between the drain and the source. The FCPF190N60 is designed for high-voltage and high-current applications, with a typical voltage rating of 600V and a current rating of 190A.
The FCPF190N60 typically comes in a TO-220 package, which is a standard through-hole package for power semiconductors. This package generally has three pins:
1. Gate (G): This pin is where the input signal is applied to control the MOSFET. It regulates the flow of current between the drain and the source.
2. Drain (D): This is the pin through which the main current flows into the MOSFET when it is in the 'on' state.
3. Source (S): The current flows out through this pin when the MOSFET is conducting.
These pins are integral for switching applications, where the gate voltage controls the state of the MOSFET and determines whether current flows between the drain and the source. The FCPF190N60 is designed for high-voltage and high-current applications, with a typical voltage rating of 600V and a current rating of 190A.
Manufacturer
The FCPF190N60 is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading American semiconductor company that specializes in designing and manufacturing a wide range of semiconductor components. Their products are used in various applications, including automotive, industrial, communications, computing, consumer electronics, and medical devices. The company is recognized for its focus on energy-efficient innovations and plays a significant role in advancing technologies related to power management, sensors, connectivity, and custom devices. onsemi's portfolio includes power and signal management, logic, discrete, and custom devices.
Application
The FCPF190N60 is a field-stop trench IGBT designed for high-efficiency and high-speed applications. Its primary application areas include:
1. Induction Heating: Efficient inverters for induction heating due to its fast switching and low power loss.
2. Welding Equipment: Suitable for welding machines, where robust performance and reliability are crucial.
3. Motor Drives: Used in variable frequency drives (VFDs) for industrial motor control.
4. Power Inverters: Ideal for solar inverters and uninterruptible power supplies (UPS), enhancing energy conversion efficiency.
5. Switch Mode Power Supplies (SMPS): Improves efficiency and reduces size in power supply designs.
These applications benefit from the IGBT's high current capability, low on-state voltage, and high-speed switching.
1. Induction Heating: Efficient inverters for induction heating due to its fast switching and low power loss.
2. Welding Equipment: Suitable for welding machines, where robust performance and reliability are crucial.
3. Motor Drives: Used in variable frequency drives (VFDs) for industrial motor control.
4. Power Inverters: Ideal for solar inverters and uninterruptible power supplies (UPS), enhancing energy conversion efficiency.
5. Switch Mode Power Supplies (SMPS): Improves efficiency and reduces size in power supply designs.
These applications benefit from the IGBT's high current capability, low on-state voltage, and high-speed switching.
Package
The FCPF190N60 is a power MOSFET typically packaged in a TO-220 package. TO-220 is a common semiconductor package that features three leads and a metal tab for heat dissipation, often used for medium to high-power components.
