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FDC5661N
+Lista de MateriaisPOWER FIELD-EFFECT TRANSISTOR
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FabricanteSemiconductor Fairchild
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Peça do Fabricante #FDC5661N
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Ficha Técnica FDC5661N DataSheet
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Pacote TSOT-23-6
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 4.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 763 pF @ 25 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSOT-23-6 |
Visão Geral
Description
Key features of the FDC5661N include:
- Low On-Resistance: This reduces conduction losses and increases the efficiency of power management circuits.
- Fast Switching Speed: Enhances performance in high-frequency applications, contributing to more efficient energy conversion.
- Small Footprint: Available in a compact package, it is ideal for applications where space is a constraint.
Overall, the FDC5661N is valued in applications where efficiency, compact size, and reliable power management are critical. Its design supports modern electronic systems' demands for improved power efficiency and performance.
Equivalent
Features
1. Dual N-Channel MOSFETs: Comprises two N-channel MOSFETs in a single package for compact and efficient design.
2. Low On-Resistance: Offers low on-state resistance, reducing power loss and enhancing efficiency.
3. Fast Switching: Designed for high-speed switching applications, improving performance in dynamic environments.
4. Compact Package: Available in a small, surface-mount package (typically a SuperSOT-6), saving space on circuit boards.
5. Applications: Ideal for DC-DC converters, load switches, and various other power management applications.
6. Thermal Efficiency: Designed to handle heat effectively, which is critical for maintaining performance and reliability.
These features make the FDC5661N suitable for applications requiring efficient power management in a compact form factor.
Pinout
1. Source 1 (S1): Source terminal for the first MOSFET.
2. Gate 1 (G1): Gate terminal for the first MOSFET.
3. Drain 2 (D2): Drain terminal for the second MOSFET.
4. Source 2 (S2): Source terminal for the second MOSFET.
5. Gate 2 (G2): Gate terminal for the second MOSFET.
6. Drain 1 (D1): Drain terminal for the first MOSFET.
The FDC5661N is often utilized in power management applications, DC-DC converters, and load switches due to its compact size and efficient performance.
Manufacturer
Application
1. DC-DC Converters: Used for power conversion in portable electronics.
2. Load Switches: Functions as an efficient switch to control power delivery.
3. Battery Management Systems: Helps in battery protection and charge control.
4. Motor Drives: Utilized in driving small DC motors.
5. LED Drivers: Assists in controlling the power supply to LEDs.
Its low on-state resistance and compact packaging make it suitable for space-constrained and power-efficient applications.