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FDG6323L
+Lista de MateriaisIC PWR SWITCH P-CHAN 1:1 SC88
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Fabricanteonsemi
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Peça do Fabricante #FDG6323L
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Pacote SC70-6
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Em Estoque6622
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | High Side |
| OutputType | P-Channel |
| Interface | On/Off |
| Voltage-Load | 2.5V ~ 8V |
| Voltage-Supply(Vcc/Vdd) | 1.5V ~ 8V |
| Current-Output(Max) | 600mA |
| RdsOn(Typ) | 410mOhm |
| InputType | Non-Inverting |
| Features | Slew Rate Controlled |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-88 (SC-70-6) |
Visão Geral
Description
The course might focus on advanced topics in a specific field—such as engineering, sciences, or technology. It could involve hands-on experiments, practical applications of theoretical knowledge, and development of technical skills. Students might engage in activities like data collection, experimentation, and analysis, using specialized equipment or software.
If you are looking into taking this course, it would be beneficial to check the specific university's or department's course catalog or syllabus for detailed information on prerequisites, course objectives, materials, and the skills that will be developed. Engaging with faculty or students who have previously taken the course can also provide valuable insights into what to expect.
Equivalent
1. BSS138 - by ON Semiconductor
2. 2N7002 - by NXP or Fairchild
3. FDN335N - by Fairchild
4. 2N7000 - by ON Semiconductor
5. Si2302 - by Vishay
These alternatives may not be drop-in replacements and it's important to check the datasheets for compatibility in terms of electrical characteristics and pin configuration.
Features
1. Dual N-Channel Configuration: This MOSFET integrates two N-channel MOSFETs in a single package, offering space savings and simplified circuit design.
2. Low On-Resistance: The device typically features a low on-state resistance, which reduces power loss and increases efficiency in circuit applications.
3. Compact Package: It comes in a small, surface-mount package, making it suitable for applications where space is limited.
4. High-Speed Operation: The FDG6323L is designed to handle rapid switching, making it suitable for high-frequency applications.
5. Low Gate Charge: This feature enables it to be driven by low-power signals, making it compatible with a variety of digital and analog circuits.
6. Protection Features: While specific protection features depend on the application, MOSFETs like the FDG6323L often include built-in ESD protection to enhance reliability.
These characteristics make the FDG6323L suitable for a range of applications in power management, portable devices, and other electronic systems.
Pinout
1. Pin 1 (G1): Gate of MOSFET Q1
2. Pin 2 (S1): Source of MOSFET Q1
3. Pin 3 (S2): Source of MOSFET Q2
4. Pin 4 (G2): Gate of MOSFET Q2
5. Pin 5 (D2): Drain of MOSFET Q2
6. Pin 6 (D1): Drain of MOSFET Q1
This device is commonly used in applications requiring efficient switching and is suitable for battery-powered circuits due to its low threshold voltage and low on-state resistance.