FDME1024NZT

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FDME1024NZT

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MOSFET 2N-CH 20V 3.8A 6-MICROFET

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Especificações

Atributo Valor
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 3.8A
Rds On(Max) @ Id Vgs 66mOhm @ 3.4A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 300pF @ 10V
Power - Max 600mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

FDME1024NZT appears to be a course code, likely from an academic curriculum, although it's not specifically recognized in mainstream databases or curricula. However, if we breakdown the code:
- "FDME" might suggest a focus area or department such as "Foundation in Mechanical Engineering" or a similar field.
- "1024" typically indicates the course's level and sequence; "1000" series courses are often introductory classes for first-year students.
- "NZT" could represent a location, a specialized topic, or a course variant.
An introductory course like FDME1024NZT would generally cover fundamental concepts relevant to its field. If "FDME" relates to mechanical engineering, the course might explore basic engineering principles such as mechanics, material properties, and introductory design concepts.
Students would gain foundational knowledge essential for advanced study, including problem-solving skills, basic calculations, and understanding engineering systems. The course likely includes lectures, practical sessions, and assessments to reinforce learning objectives. For precise details, it's advisable to consult the specific institution offering the course.

Equivalent

The FDME1024NZT chip is a power MOSFET manufactured by ON Semiconductor. Equivalent products would typically be other N-channel MOSFETs with similar voltage and current ratings, RDS(on), and package type. Possible alternatives include:
1. NXP PSMN017-30MLC
2. Infineon BSC010N04LSI
3. Vishay SiRA80DP
When selecting an equivalent, ensure that the electrical characteristics, package type, and thermal performance match your application requirements. Always verify with the datasheets for compatibility.

Features

The FDME1024NZT is a power MOSFET designed for efficient switching applications. Key features include:
1. N-Channel Configuration: It has an N-channel setup, suitable for low-side switching.
2. Voltage and Current Ratings: The MOSFET typically handles a drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of approximately 4.2A, making it suitable for low to medium power applications.
3. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency.
4. Compact Package: Available in a compact surface-mount package, it is ideal for space-constrained designs.
5. Fast Switching: The device is designed for fast switching speeds, reducing transition losses and improving overall efficiency.
6. Thermal Performance: It boasts good thermal performance, allowing it to handle power efficiently while maintaining reliability.
These features make the FDME1024NZT suitable for applications like DC-DC converters, load switches, and power management systems in consumer electronics and industrial applications.

Pinout

The FDME1024NZT is a dual N-channel MOSFET produced by ON Semiconductor. It comes in a small-footprint, 3mm x 3mm SO-8FL package. This part is specifically designed for low voltage applications and is known for its efficient power management capabilities.
Regarding the pin count and function, the FDME1024NZT has 8 pins. The general pin configuration for a dual MOSFET in this package includes:
1. Source (S1/S2): Connected to the source terminal of each MOSFET.
2. Gate (G1/G2): Used to control the MOSFET switches.
3. Drain (D1/D2): Connected to the drain terminal of each MOSFET.
4. The remaining pins are typically connected to common drain or source terminals internally.
This device is utilized in a variety of applications, including DC-DC converters, power management in portable devices, and load switching. Its low on-resistance and high efficiency make it suitable for space-constrained and efficiency-critical designs.

Manufacturer

The FDME1024NZT is manufactured by ON Semiconductor, a company known for designing and supplying a broad portfolio of energy-efficient power and signal management, logic, discrete, and custom devices. ON Semiconductor is a leading supplier in the semiconductor industry, providing high-performance solutions for a variety of sectors including automotive, industrial, consumer electronics, computing, and communications. The company focuses on driving energy efficiency innovations, aiming to reduce global energy use through their advanced semiconductor products.

Application

The FDME1024NZT is a dual N-channel MOSFET, often used in various electronic applications due to its low on-resistance and compact SOT-723 package. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits.
2. Switching Applications: Suitable for load switches and power distribution.
3. Battery-Powered Devices: Ideal for smartphones, tablets, and other portable electronics due to its efficiency in low-power conditions.
4. Consumer Electronics: Employed in devices that require efficient power control and distribution.
5. LED Drivers: Used for driving LEDs efficiently in lighting applications.
These applications leverage the component's efficient power handling and space-saving design.

Package

The FDME1024NZT is a MOSFET component typically housed in a microFET or DFN (Dual Flat No-leads) package. These packages are compact and suitable for space-constrained applications, providing efficient thermal performance and reliable electrical characteristics.

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