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FDMS86263P
+Lista de MateriaisMOSFET P-CH 150V 4.4A/22A 8PQFN
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Fabricanteonsemi
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Peça do Fabricante #FDMS86263P
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Pacote TDFN-8
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Em Estoque3277
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 4.4A (Ta), 22A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 53mOhm @ 4.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 3905 pF @ 75 V |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Visão Geral
Description
Key features of the FDMS86263P include low on-state resistance, which minimizes power loss and heat generation, making it ideal for high-efficiency applications. It also has a fast switching speed, enhancing the performance of circuits in dynamic environments. The MOSFET can handle significant current and voltage, making it suitable for demanding applications.
The FDMS86263P's package is optimized for thermal performance, allowing it to dissipate heat effectively, which is crucial for maintaining reliability in high-power applications. Its compact size and robust design make it a versatile choice for engineers looking to optimize power efficiency in both consumer electronics and industrial applications.
Equivalent
Features
1. Low On-Resistance: It offers low R_DS(on) values, minimizing conduction losses and improving efficiency.
2. Fast Switching Performance: It supports high-speed switching, suitable for applications requiring rapid on/off cycling.
3. Thermal Performance: This MOSFET provides efficient thermal management, often utilized in compact designs with high power density.
4. Robust Design: It features a rugged design capable of handling voltage spikes and inrush currents, enhancing reliability.
5. Package Options: Available in surface-mount packages like SO-8, making it suitable for PCB designs requiring minimal space.
6. High Current Capability: Supports high current loads, making it suitable for various power applications such as DC-DC converters, synchronous rectification, and motor drives.
7. Static and Dynamic Performance: Ensures optimal static and dynamic electrical performance, enhancing overall circuit efficiency.
These features make the FDMS86263P ideal for high-efficiency power conversion and management applications.
Pinout
Here is a concise summary of the pin functions:
1. Source (S): Multiple pins connected to the source terminal of the MOSFET to handle high current.
2. Gate (G): The gate pin is used to control the MOSFET's switching by applying a voltage to turn it on or off.
3. Drain (D): Multiple pins are connected to the drain terminal to conduct the current when the MOSFET is on.
The configuration follows a common layout for Power56 packages, where the source and drain are often spread across multiple pins to optimize current handling and thermal performance. The specific datasheet for the FDMS86263P will provide precise details of the pin configuration and recommended usage.