FDMS86263P

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FDMS86263P

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MOSFET P-CH 150V 4.4A/22A 8PQFN

  • Fabricanteonsemi

  • Peça do Fabricante #FDMS86263P

  • Pacote TDFN-8

  • Em Estoque3277

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 4.4A (Ta), 22A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 53mOhm @ 4.4A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 63 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 3905 pF @ 75 V
Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)

Visão Geral

Description

The FDMS86263P is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in electronic circuits. It is part of the Fairchild Semiconductor product line, which is now under ON Semiconductor. This device is used in various applications, including power conversion, load switching, and motor control due to its high efficiency and reliability.
Key features of the FDMS86263P include low on-state resistance, which minimizes power loss and heat generation, making it ideal for high-efficiency applications. It also has a fast switching speed, enhancing the performance of circuits in dynamic environments. The MOSFET can handle significant current and voltage, making it suitable for demanding applications.
The FDMS86263P's package is optimized for thermal performance, allowing it to dissipate heat effectively, which is crucial for maintaining reliability in high-power applications. Its compact size and robust design make it a versatile choice for engineers looking to optimize power efficiency in both consumer electronics and industrial applications.

Equivalent

The FDMS86263P is a power MOSFET, and equivalent products can include similar N-channel MOSFETs with comparable voltage, current, and RDS(on) ratings. Some potential equivalents might be the NXP PSMN1R0-30YLD, Infineon IPB017N10N5, or Vishay Siliconix SiR680DP. Always verify the specifications to ensure compatibility with your application, as parameters like package type and thermal performance might differ.

Features

The FDMS86263P is a PowerTrench® MOSFET designed by ON Semiconductor, optimized for efficient power management applications. Key features include:
1. Low On-Resistance: It offers low R_DS(on) values, minimizing conduction losses and improving efficiency.

2. Fast Switching Performance: It supports high-speed switching, suitable for applications requiring rapid on/off cycling.
3. Thermal Performance: This MOSFET provides efficient thermal management, often utilized in compact designs with high power density.
4. Robust Design: It features a rugged design capable of handling voltage spikes and inrush currents, enhancing reliability.
5. Package Options: Available in surface-mount packages like SO-8, making it suitable for PCB designs requiring minimal space.
6. High Current Capability: Supports high current loads, making it suitable for various power applications such as DC-DC converters, synchronous rectification, and motor drives.
7. Static and Dynamic Performance: Ensures optimal static and dynamic electrical performance, enhancing overall circuit efficiency.
These features make the FDMS86263P ideal for high-efficiency power conversion and management applications.

Pinout

The FDMS86263P is a PowerTrench® MOSFET from ON Semiconductor. It is designed for power management applications, such as DC-DC converters and load switches. The MOSFET is packaged in a Power56 package, which typically has an industry-standard of 8 pins.
Here is a concise summary of the pin functions:
1. Source (S): Multiple pins connected to the source terminal of the MOSFET to handle high current.
2. Gate (G): The gate pin is used to control the MOSFET's switching by applying a voltage to turn it on or off.
3. Drain (D): Multiple pins are connected to the drain terminal to conduct the current when the MOSFET is on.
The configuration follows a common layout for Power56 packages, where the source and drain are often spread across multiple pins to optimize current handling and thermal performance. The specific datasheet for the FDMS86263P will provide precise details of the pin configuration and recommended usage.

Manufacturer

The FDMS86263P is manufactured by ON Semiconductor, a leading semiconductor supplier company. ON Semiconductor provides a variety of products that include power and signal management, logic, discrete, and custom devices for a wide range of applications. The company is known for its focus on energy-efficient innovations, serving markets such as automotive, industrial, cloud power, and Internet of Things (IoT). As a global company, ON Semiconductor delivers solutions that help customers reduce global energy use and designs intelligent power and sensing technologies that are integral to modern electronics.

Application

The FDMS86263P is a power MOSFET designed for various applications, primarily focusing on efficient power management. Its main application areas include DC-DC converters, synchronous rectification in SMPS (Switched-Mode Power Supplies), and motor drives. Additionally, it is suitable for use in power tools, battery management systems, and automotive electronics where high efficiency and thermal performance are critical. Its low on-resistance and fast switching capabilities make it ideal for high-frequency applications and energy-efficient designs.

Package

The FDMS86263P is a Power Trench MOSFET and it typically comes in a SO-8 package type. This package is a surface-mount, small-outline package ideal for efficient power management and switching applications.

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