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FDN306P
+Lista de MateriaisSMALL SIGNAL FIELD-EFFECT TRANSI
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FabricanteSemiconductor Fairchild
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Peça do Fabricante #FDN306P
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Ficha Técnica FDN306P DataSheet
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Pacote SOT-3
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 40mOhm @ 2.6A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 1138 pF @ 6 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Visão Geral
Description
Students enrolled in FDN306P can expect to engage with key theories, methodologies, and practices within the subject area, potentially involving lectures, seminars, and hands-on projects. The course might also include assessments such as exams, essays, and presentations to evaluate students' understanding and application of the material. For precise details, students are advised to consult their institution's course catalog or contact the course instructor.
Equivalent
Features
1. Vds (Drain-Source Voltage): Typically supports up to 30V.
2. Id (Continuous Drain Current): Capable of handling continuous current up to 3.0A.
3. Rds(on) (Drain-Source On-Resistance): Low on-resistance, usually around 45 mΩ at a Vgs of 10V, which ensures efficient operation with minimal power loss.
4. Vgs(th) (Gate-Source Threshold Voltage): Usually around 1V, facilitating easy gate control.
5. Package Type: Available in a compact SOT-23 package, suitable for space-constrained applications.
6. Fast Switching Speed: Ideal for high-speed applications due to rapid switching capabilities.
7. Thermal Performance: Good thermal characteristics for reliability in various temperature conditions.
These features make the FDN306P suitable for a wide range of applications, including power management, motor control, and switching circuits in consumer electronics and automotive systems.
Pinout
1. Gate (G): This pin controls the ON/OFF state of the MOSFET. By applying a voltage, the MOSFET can be turned on to allow current to flow between the source and drain.
2. Source (S): This is the terminal through which the current enters the MOSFET. It is connected to the negative side of the load in a typical application.
3. Drain (D): Current flows out through this terminal when the MOSFET is in the ON state, completing the circuit.
In a P-channel MOSFET like the FDN306P, the device is turned on when the gate voltage is lower than the source voltage. It is widely used for low power applications, offering efficient switching capabilities.