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FDS3590
+Lista de MateriaisMOSFET N-CH 80V 6.5A 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #FDS3590
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Em Estoque5196
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Especificações
| Atributo | Valor |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 40 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS35 |
Visão Geral
Description
Students will engage in hands-on experiences, laboratory work, and case studies to develop practical skills in food product development and assessment. The course aims to equip students with critical thinking abilities to solve complex problems related to food systems, promoting innovation and ethical considerations in food production. Overall, FDS3590 prepares students for careers in food science, research, and related fields, fostering an understanding of the global challenges facing food security and safety.
Equivalent
1. IRF3708 - N-channel MOSFET
2. BSS138 - N-channel MOSFET
3. TPS2815 - N-channel MOSFET
For exact replacements, check specific parameters like voltage, current ratings, and package types. Always confirm datasheets for compatibility.
Features
1. Dual-Channel Processing: Supports simultaneous processing of two independent data streams, enhancing efficiency in applications like audio and video.
2. High Sampling Rates: Capable of handling high-frequency data input, ensuring superior performance in real-time applications.
3. Flexible Architecture: Features a programmable architecture, allowing customization for specific application needs.
4. Low Power Consumption: Designed for energy efficiency, making it suitable for battery-operated devices.
5. Integrated Memory: Includes on-chip memory for faster data access and reduced latency.
6. Robust I/O Interfaces: Offers multiple input/output options for seamless integration with other devices and systems.
7. Advanced Algorithms Support: Compatible with various algorithms for signal processing, including filtering, modulation, and demodulation techniques.
Overall, the FDS3590 is ideal for applications requiring high-speed processing and flexibility in digital signal handling.
Pinout
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal for the first N-channel MOSFET.
3. Drain 1 - Drain terminal for the first N-channel MOSFET.
4. Drain 2 - Drain terminal for the second N-channel MOSFET.
5. Source 2 - Source terminal for the second N-channel MOSFET.
6. Gate 2 - Controls the second N-channel MOSFET.
7. N/C - Not connected (no function).
8. N/C - Not connected (no function).
The FDS3590 is typically used in power management applications, such as load switching and power routing, due to its low on-resistance and fast switching capabilities.