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FDS6630A
+Lista de MateriaisMOSFET N-CH 30V 6.5A 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #FDS6630A
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Ficha Técnica FDS6630A DataSheet
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 6.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 38mOhm @ 6.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 7 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 460 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
Visão Geral
Description
Students enrolled in such a course can expect to engage in both theoretical learning and practical lab work, applying scientific principles to real-world food industry challenges. The course might also delve into the latest scientific advancements and regulatory standards in food science. To find specific details, such as prerequisites, course objectives, or syllabus, consulting the academic catalog or the course instructor at the relevant institution would be necessary.
Equivalent
1. IRF530by International Rectifier
2. IRF540by International Rectifier
3. NTD4906N by ON Semiconductor
4. BUK555-60A by NXP Semiconductors
5. STP80NF55 by STMicroelectronics
Always ensure to cross-reference datasheets to verify electrical characteristics and compatibility before substituting in a circuit.
Features
1. Low On-Resistance: It offers low R_DS(on), which enhances efficiency by minimizing power loss during operation.
2. High Current Capability: Supports a high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Optimized for rapid switching, improving performance in applications requiring quick response times.
4. Thermal Performance: Designed to handle thermal stress efficiently, ensuring reliability over extended use.
5. Robust Design: Built to withstand voltage spikes and resist overstress conditions, enhancing durability.
6. Compact Package: Available in a small form factor, making it ideal for space-constrained environments.
7. Wide Range of Applications: Suitable for DC-DC converters, power management tasks, and other applications where efficient power control is required.
The combination of these features makes the FDS6630A a versatile choice for engineers designing circuits requiring reliable and efficient power management solutions.
Pinout
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal for the second MOSFET, internally connected to Pin 6.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
6. Pin 6 (Drain 2): Drain terminal for the second MOSFET, internally connected to Pin 3.
7. Pin 7 (Drain 1): Drain terminal for the first MOSFET, internally connected to Pin 8.
8. Pin 8 (Drain 1): Drain terminal for the first MOSFET, internally connected to Pin 7.
The FDS6630A is used for switching applications and power management in electronic circuits.