FDS6690AS

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MOSFET N-CH 30V 10A 8SOIC

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Especificações

Atributo Valor
Series PowerTrench®, SyncFET™
PartStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 10A (Ta)
DriveVoltage(MaxRdsOn,MinRdsOn) 4.5V, 10V
RdsOn(Max)@Id,Vgs 12mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3V @ 1mA
GateCharge(Qg)(Max)@Vgs 23 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 910 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC
Package/Case 8-SOIC (0.154", 3.90mm Width)
BaseProductNumber FDS6690

Visão Geral

Description

The FDS6690AS is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance (R_DS(on)) and fast switching speeds, making it ideal for use in DC-DC converters, power supplies, and motor control applications. The device is housed in a compact package, which helps reduce the overall footprint in circuit designs.
Key specifications typically include a maximum continuous drain current, a wide operating temperature range, and low gate threshold voltage, which enhances its efficiency and thermal performance. The FDS6690AS is often utilized in consumer electronics, automotive applications, and various industrial systems due to its reliability and effectiveness in handling high power levels.
With its robust design and favorable electrical characteristics, the FDS6690AS plays a crucial role in improving the efficiency and performance of modern electronic devices.

Equivalent

The FDS6690AS is a dual N-channel MOSFET. Equivalent products include the IRLZ44N IRF3205, and AOD4184. Other options may include the BSC045N06LS and BSS138. Always verify specifications such as voltage, current ratings, and package types before substituting.

Features

The FDS6690AS is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance: Ensures efficient operation with minimal power loss, enhancing performance in power applications.
2. High-Speed Switching: Facilitates rapid switching, making it suitable for high-frequency applications, such as DC-DC converters.
3. Thermal Performance: Designed with good thermal conductivity, allowing for effective heat dissipation and improved reliability.
4. Voltage Rating: Capable of handling high voltages, typically up to 30V.
5. Package Type: Available in a compact SO-8 package, optimizing space in circuit designs.
6. Gate Threshold Voltage: Features a low gate threshold voltage, making it easy to turn on with standard logic levels.
7. Ruggedness: Designed to withstand high stress, making it suitable for automotive and industrial applications.
These features make the FDS6690AS an ideal choice for efficient power management and switching solutions in various electronic applications.

Pinout

The FDS6690AS is a dual N-channel MOSFET with a pin count of 8. Its primary function is to serve as a power switch in various applications, including power management and efficient power conversion in devices.
Pin Configuration:
1. Gate 1 (G1) - Control signal for the first N-channel MOSFET.
2. Source 1 (S1) - Connects to the source terminal of the first MOSFET.
3. Drain 1 (D1) - Connects to the drain terminal of the first MOSFET.
4. Gate 2 (G2) - Control signal for the second N-channel MOSFET.
5. Source 2 (S2) - Connects to the source terminal of the second MOSFET.
6. Drain 2 (D2) - Connects to the drain terminal of the second MOSFET.
7. Drain 1 (D1) - Common drain for both MOSFETs.
8. Source (S) - Common source for both MOSFETs.
The FDS6690AS is designed for high-speed switching and has low on-resistance, making it suitable for applications requiring efficient power management.

Manufacturer

The FDS6690AS is manufactured by ON Semiconductor, a company known for its focus on semiconductor solutions. ON Semiconductor designs and manufactures a wide range of products, including power management, analog, and logic devices, as well as discrete components, sensors, and custom solutions. They cater to various industries such as automotive, industrial, consumer electronics, and telecommunications. The company emphasizes energy-efficient technologies and innovation, contributing to advancements in the Internet of Things (IoT), automotive systems, and renewable energy applications.
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally, providing essential components that support modern electronic designs and applications across diverse markets.

Application

The FDS6690AS is a dual N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: Used in step-down (buck) or step-up (boost) converters for efficient voltage regulation.
2. Load Switching: Ideal for switching applications in power supplies, LED drivers, and motor controls.
3. Power Management ICs: Integrated in devices requiring low on-resistance and fast switching.
4. Battery Management Systems: Used to enhance charging and discharging efficiency.
5. Consumer Electronics: Employed in smartphones, tablets, and laptops for efficient power distribution.
Its low R_DS(on) and high-speed performance make it suitable for these applications.

Package

The FDS6690AS is packaged in a SO-8 (Small Outline) package type, which is a surface-mount format commonly used for integrated circuits and MOSFETs.

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