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FDS6912A
+Lista de MateriaisMOSFET 2N-CH 30V 6A 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #FDS6912A
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Ficha Técnica FDS6912A DataSheet
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 6A |
| Rds On(Max) @ Id Vgs | 28mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.1nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 575pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The course could also delve into advanced concepts, such as predictive modeling, big data technologies, and data-driven decision-making strategies. Practical components may include hands-on projects, case studies, or collaborations with industry partners to provide real-world experience. The course might be designed for graduate students or professionals looking to deepen their understanding of data science and its applications across different sectors. To get specific details, it would be best to refer to the institution offering the course for a syllabus or official course description.
Equivalent
1. IRF7319 from Infineon Technologies
2. Si4925ADY from Vishay Siliconix
3. DMG3406LSD from Diodes Incorporated
4. BSS84 from ON Semiconductor
It is important to verify the specific parameters and package type to ensure compatibility for your particular application.
Features
1. Dual P-Channel Configuration: This design allows for two MOSFETs in a single package, optimizing space and simplifying circuit design.
2. Low On-Resistance: It offers low Rds(on), ensuring efficient conduction and minimal power loss, which is crucial for battery-operated devices.
3. Compact Package: Typically housed in a small, surface-mount package (such as SO-8), making it suitable for compact electronic devices.
4. Fast Switching Speed: Enables high-speed operation, which is beneficial for switching applications.
5. Low Gate Charge: Reduces power loss and improves efficiency, especially in high-frequency applications.
6. Logic Level Gate: Compatible with logic level gate drive, allowing it to be driven directly from microcontrollers or logic circuits.
These features make the FDS6912A ideal for applications such as DC-DC converters, load switches, and battery-powered devices, where efficiency and space-saving are critical.
Pinout
1. Pins 1 & 8: Source 1 (S1) - These pins are connected internally to the source of the first MOSFET.
2. Pins 2 & 7: Gate 1 (G1) - These pins are connected to control the gate of the first MOSFET.
3. Pins 3 & 6: Drain 2 (D2) - These pins are connected internally to the drain of the second MOSFET.
4. Pins 4 & 5: Source 2 (S2) - These pins are connected internally to the source of the second MOSFET.
Note: The first MOSFET uses pins 1, 2, and 3, while the second MOSFET uses pins 6, 7, and 8. The FDS6912A is designed for high-speed switching applications and is used in various applications, including power management circuits.