FDS8858CZ

Imagens apenas para referência

MOSFET N/P-CH 30V 8.6/7.3A 8SOIC

  • Fabricanteonsemi

  • Peça do Fabricante #FDS8858CZ

  • Pacote SOIC-8

  • Em Estoque3311

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 8.6A, 7.3A
Rds On(Max) @ Id Vgs 17mOhm @ 8.6A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 24nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1205pF @ 15V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Equivalent

The FDS8858CZ is a dual N-channel MOSFET. Equivalent alternatives include:
- FDS8858NZ (similar specs, different package)
- SI7852DP-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- CSD17313Q2 (Texas Instruments)
Check datasheets for exact compatibility in voltage (30V), current (6.5A), and RDS(on) (25mΩ). Confirm pinout and package (SOIC-8) matches your design.

Features

The FDS8858CZ is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Rating: 8.7A continuous (ID) per channel.
- Low On-Resistance: 13mΩ (typical) at VGS = 10V.
- Fast Switching: Optimized for high-speed applications.
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V.
- Low Gate Charge (QG): Improves efficiency in switching circuits.
- Power Dissipation: 2W per channel (TA = 25°C).
- Package: SOIC-8 (compact and space-saving).
- Applications: Power management, DC-DC converters, motor control, and load switching.
This MOSFET is designed for high efficiency and reliability in low-voltage systems.

Application

The FDS8858CZ is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drives.
3. Load Switching – Battery protection, power distribution.
4. Portable Devices – Smartphones, tablets (efficient power switching).
5. Automotive Systems – LED drivers, infotainment power circuits.
It offers low on-resistance (RDS(on)) and high efficiency, making it suitable for compact, high-performance applications.

Package

The FDS8858CZ is a dual N-channel MOSFET in a SO-8 (8-pin Small Outline) package. It features a compact, surface-mount design for high-density PCB applications. The SO-8 package is industry-standard, offering good thermal performance and ease of assembly. Key specs include 30V drain-source voltage and 6.5A continuous drain current. Suitable for power management in portable electronics.