Imagens apenas para referência
FDS8858CZ
+Lista de MateriaisMOSFET N/P-CH 30V 8.6/7.3A 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #FDS8858CZ
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 8.6A, 7.3A |
| Rds On(Max) @ Id Vgs | 17mOhm @ 8.6A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 24nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1205pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Equivalent
- FDS8858NZ (similar specs, different package)
- SI7852DP-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- CSD17313Q2 (Texas Instruments)
Check datasheets for exact compatibility in voltage (30V), current (6.5A), and RDS(on) (25mΩ). Confirm pinout and package (SOIC-8) matches your design.
Features
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Rating: 8.7A continuous (ID) per channel.
- Low On-Resistance: 13mΩ (typical) at VGS = 10V.
- Fast Switching: Optimized for high-speed applications.
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V.
- Low Gate Charge (QG): Improves efficiency in switching circuits.
- Power Dissipation: 2W per channel (TA = 25°C).
- Package: SOIC-8 (compact and space-saving).
- Applications: Power management, DC-DC converters, motor control, and load switching.
This MOSFET is designed for high efficiency and reliability in low-voltage systems.
Application
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drives.
3. Load Switching – Battery protection, power distribution.
4. Portable Devices – Smartphones, tablets (efficient power switching).
5. Automotive Systems – LED drivers, infotainment power circuits.
It offers low on-resistance (RDS(on)) and high efficiency, making it suitable for compact, high-performance applications.