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FDS89161
+Lista de MateriaisMOSFET 2N-CH 100V 2.7A 8SOIC
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Fabricanteonsemi
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Peça do Fabricante #FDS89161
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Pacote SO-8
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Em Estoque5715
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A |
| Rds On(Max) @ Id Vgs | 105mOhm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.1nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 210pF @ 50V |
| Power - Max | 1.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
If this identifier relates to a product or module, it could be associated with specialized software, hardware, or a technological solution designed for specific applications. Products or modules with such codes often have detailed specifications and are designed for integration into larger systems.
Without additional context or specifics, FDS89161 remains ambiguous. Providing more information or clarifying the field or industry would help offer a more precise introduction. If you have access to specific documentation or descriptions, reviewing those could provide clarity on FDS89161's purpose and details.
Equivalent
1. Vishay Si4924DY
2. ON Semiconductor NTMFS4935N
3. Infineon BSC092N03LS
4. Renesas HAT2165H
These alternatives should be verified for specific electrical and thermal characteristics to ensure compatibility with your application.
Features
1. Dual N-Channel: It has two N-channel MOSFETs in a single package, which helps in reducing board space and simplifying circuit design.
2. Low On-Resistance: This device offers low on-state resistance (RDS(on)), which minimizes power loss and improves efficiency, making it suitable for applications requiring high efficiency.
3. High Current Capacity: The MOSFETs are capable of handling significant current, making them ideal for use in power conversion and management circuits.
4. Thermal Performance: It is designed to provide good thermal performance, which is crucial for maintaining reliability in high-power applications.
5. Compact Packaging: The device comes in a small package, which is beneficial for designs where space is limited.
6. Fast Switching: It supports fast switching speeds, enhancing performance in applications that require quick response times.
These features make the FDS89161 suitable for various applications, including DC-DC converters, motor drives, and power management in portable devices.
Pinout
Here is a breakdown of the typical SO-8 pin configuration for dual N-channel MOSFETs like the FDS89161:
1. Pins 1, 2, 3: Source of MOSFET 1
2. Pin 4: Gate of MOSFET 1
3. Pin 5: Gate of MOSFET 2
4. Pins 6, 7, 8: Source of MOSFET 2
5. Middle section (internally tied): Drain for both MOSFETs
This configuration allows the FDS89161 to effectively manage power distribution and control in various electronic circuits. Always refer to the specific datasheet for precise pin configuration and electrical characteristics.