FGA25N120ANTDTU

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FGA25N120ANTDTU

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IGBT NPT/TRENCH 1200V 50A TO3P

  • Fabricanteonsemi

  • Peça do Fabricante #FGA25N120ANTDTU

  • Pacote TO-3P-3

  • Em Estoque4329

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Especificações

Atributo Valor
Package Bulk,Tube
ProductStatus Last Time Buy
IGBTType NPT and Trench
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 50 A
Current-CollectorPulsed(Icm) 90 A
Vce(on)(Max)@VgeIc 2.65V @ 15V, 50A
Power-Max 312 W
SwitchingEnergy 4.1mJ (on), 960µJ (off)
InputType Standard
GateCharge 200 nC
Td(on/off)@25°C 50ns/190ns
TestCondition 600V, 25A, 10Ohm, 15V
ReverseRecoveryTime(trr) 350 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Visão Geral

Description

The FGA25N120ANTDTU is a high-performance IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed for power switching applications. Key features include:
- Voltage Rating: 1200V
- Current Rating: 25A (continuous)
- Low VCE(sat): Enhances efficiency by reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations.
- Robust Design: Features anti-parallel diode for inductive load handling.
Commonly used in motor drives, inverters, UPS systems, and industrial power supplies, it offers reliability and thermal stability. The TO-247 package ensures effective heat dissipation.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FGA25N120ANTDTU (25A, 1200V IGBT) include:
- IRG4PH50UD (Infineon)
- HGTG20N120BND (Fairchild/ON Semi)
- NGTB25N120LWG (ON Semiconductor)
- STGW25H120DF2 (STMicroelectronics)
These are 25A-30A, 1200V IGBTs with similar characteristics. Verify datasheets for exact compatibility in your application.

Features

The FGA25N120ANTDTU is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 1200V
- Current Rating: 25A (continuous)
- Low VCE(sat): Ensures reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Input Impedance: Easy drive with low gate current
- Robust & Reliable: Suitable for harsh environments
- Anti-Parallel Diode: Integrated for freewheeling current protection
- Low Thermal Resistance: Enhances heat dissipation
- TO-3P Package: Robust mechanical design
Commonly used in power converters, motor drives, and UPS systems.

Pinout

The FGA25N120ANTDTU is an IGBT (Insulated Gate Bipolar Transistor) module with the following key specifications:
- Pin Count: Typically 3 pins (Gate, Collector, Emitter) in a TO-3P package.
- Function: High-power switching in applications like inverters, motor drives, and power supplies.
- Voltage Rating: 1200V
- Current Rating: 25A
- Features: Low saturation voltage, fast switching, and built-in anti-parallel diode for freewheeling.
It is designed for efficient power control in industrial and automotive systems.

Application

The FGA25N120ANTDTU is a 1200V, 25A IGBT with an anti-parallel diode, commonly used in:
- Power Supplies: High-efficiency SMPS and inverters.
- Motor Drives: Industrial and automotive motor control.
- Renewable Energy: Solar inverters and wind power systems.
- Welding Equipment: High-power welding machines.
- UPS Systems: Uninterruptible power supplies for stable energy backup.
Its fast switching and low saturation voltage make it ideal for high-power, high-frequency applications.

Package

The FGA25N120ANTDTU is an IGBT (Insulated Gate Bipolar Transistor) module. It typically comes in a TO-3P(N) package, which is a through-hole, three-pin package designed for high-power applications. This package ensures efficient heat dissipation and robust performance in demanding circuits.

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