FGAF20N60SMD

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FGAF20N60SMD

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IGBT FIELD STOP 600V 40A TO3PF

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Especificações

Atributo Valor
Package Bulk,Tube
ProductStatus Obsolete
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 60 A
Vce(on)(Max)@VgeIc 1.7V @ 15V, 20A
Power-Max 75 W
SwitchingEnergy 452µJ (on), 141µJ (off)
InputType Standard
GateCharge 64 nC
Td(on/off)@25°C 12ns/91ns
TestCondition 400V, 20A, 10Ohm, 15V
ReverseRecoveryTime(trr) 26.7 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3 Full Pack

Visão Geral

Description

The FGAF20N60SMD is a semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT), used primarily for switching and amplification in electronic circuits. Made by Fairchild Semiconductor, this component is part of the larger FGAF series, which is known for its robust performance in power management applications.
Key features of the FGAF20N60SMD include a maximum collector current of 40A and a collector-emitter voltage rating of 600V. It offers low saturation voltage and fast switching capabilities, making it suitable for applications such as motor drives, induction heating, and power inverters. The device is housed in a SMD (Surface Mount Device) package, which allows for efficient heat dissipation and compact circuit design.
Overall, the FGAF20N60SMD is valued for its efficiency, reliability, and ability to handle high power loads, making it a popular choice in industrial and consumer electronics where efficient power management is crucial.

Equivalent

The FGAF20N60SMD is an IGBT (Insulated Gate Bipolar Transistor) and its equivalent products include:
1. IRG4PC50W from Infineon Technologies
2. HGTG20N60A4 from ON Semiconductor
3. STGW20NC60VD from STMicroelectronics
These equivalents may vary in specifications, so it's crucial to verify parameters such as voltage, current, and switching speed to ensure compatibility with your application.

Features

The FGAF20N60SMD is a 600V N-channel MOSFET designed for high-efficiency power switching applications. Key features of this MOSFET include:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 20A, making it suitable for higher voltage applications.
2. Low On-Resistance: The device offers low on-state resistance (R_DS(on)), which minimizes power loss and enhances efficiency during operation.
3. Fast Switching Speed: Its design supports rapid switching, reducing transition losses and improving the overall performance in high-frequency applications.
4. Robust Design: The MOSFET is built to handle significant power dissipation, with a total power dissipation (P_D) rating that supports reliability in demanding conditions.
5. Package Type: It comes in a TO-3P package, known for its heat dissipation capabilities, which is crucial for maintaining performance and longevity.
6. Applications: The FGAF20N60SMD is ideal for applications in power supplies, motor drives, and other systems requiring efficient high-voltage power management.

Pinout

The FGAF20N60SMD is an Insulated Gate Bipolar Transistor (IGBT) typically used for fast switching applications, such as those found in power electronics. It usually comes in a TO-3P package. The pin count for this package is generally three:
1. Collector: This is the main terminal for the current input to the IGBT.
2. Gate: This terminal is responsible for triggering the IGBT. A voltage applied here controls the flow of current between the collector and the emitter.
3. Emitter: This is the terminal from which the current exits.
The FGAF20N60SMD is designed for high efficiency and fast switching, with a voltage rating of 600V and a current rating of 20A. It is often employed in inverters, UPS systems, and motor drives, among other applications. Always refer to the manufacturer's datasheet for specific details and pin configuration.

Manufacturer

The FGAF20N60SMD is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. ON Semiconductor is a multinational company that specializes in designing and manufacturing a wide range of semiconductor components. These components are used in various applications across different industries, including automotive, industrial, computing, consumer electronics, and communications.
The company focuses on providing energy-efficient and innovative solutions to help manage power in electronic devices and systems. Its product portfolio includes power and signal management, logic, discrete, and custom devices. Being a key player in the semiconductor industry, ON Semiconductor serves a global clientele, offering products that are integral to the development of technologies in areas such as the Internet of Things (IoT), electric vehicles, smart devices, and more. The acquisition of Fairchild Semiconductor in 2016 helped ON Semiconductor expand its range of power management solutions.

Application

The FGAF20N60SMD is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for use in a variety of power electronic applications. Its application areas include:
1. Motor Drives: Suitable for industrial motor control and servo drives due to its high efficiency and fast switching capabilities.
2. Inverters: Used in solar inverters, UPS systems, and general-purpose inverters for efficient power conversion.
3. Power Supplies: Ideal for switch-mode power supplies (SMPS) due to its reliability and performance in handling high voltages.
4. Welding Equipment: Provides effective control in welding applications, offering robustness and durability.
5. Induction Heating: Used in induction heating systems for its ability to handle high frequencies and power levels.
These applications benefit from the IGBT's low switching losses and high-speed operation.

Package

The FGAF20N60SMD is an Insulated Gate Bipolar Transistor (IGBT) and it typically comes in a TO-3P package. The TO-3P package is a type of through-hole package designed for high-power devices, providing efficient heat dissipation and accommodating larger components.

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