FGL60N100BNTD

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FGL60N100BNTD

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IGBT 1000V 60A 180W TO264

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Especificações

Atributo Valor
Package / Case Tube
Part Status Obsolete
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown(Max) 1000 V
Current - Collector(Ic)(Max) 60 A
Current - Collector Pulsed(Icm) 120 A
Vce(on)(Max) @ Vge Ic 2.9V @ 15V, 60A
Power - Max 180 W
Input Type Standard
Gate Charge 275 nC
Td(on / off) @ 25°C 140ns/630ns
Test Condition 600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr) 1.2 µs
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

Visão Geral

Description

The FGL60N100BNTD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed for power switching applications. Key features include:
- Voltage Rating: 1000V
- Current Rating: 60A (continuous)
- Low VCE(sat): Reduces conduction losses
- Fast Switching: Optimized for efficiency in inverters, motor drives, and UPS systems
- Robust Design: High short-circuit withstand capability
Packaged in a TO-247 form factor, it offers thermal efficiency and ease of mounting. Suitable for industrial and automotive applications requiring high power handling.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FGL60N100BNTD (600V, 60A IGBT) include:
- IXGH60N100B2 (600V, 60A, TO-247)
- IRG4PC50UD (600V, 55A, TO-247AC)
- STGW60H100DF (600V, 60A, TO-247)
- APT60GF100B2 (600V, 60A, TO-247)
Check datasheets for exact specs before substitution.

Features

The FGL60N100BNTD is a 1000V, 60A NPT IGBT with the following key features:
- Voltage Rating: 1000V (VCES)
- Current Rating: 60A (IC @25°C)
- Low VCE(sat): 2.5V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: Non-Punch Through (NPT) technology for improved ruggedness
- Temperature Range: Operates up to 150°C
- Package: TO-247 (3-pin) for easy mounting and heat dissipation
- Applications: Suitable for inverters, motor drives, and power supplies
This IGBT balances efficiency and durability, making it ideal for high-power switching.

Pinout

The FGL60N100BNTD is a 600V, 60A IGBT (Insulated Gate Bipolar Transistor) in a TO-247-3 package, featuring 3 pins with the following functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Current return path.
It includes a fast recovery anti-parallel diode, making it suitable for high-efficiency switching applications like motor drives and power converters.

Package

The FGL60N100BNTD is a 600V, 60A IGBT in a TO-247 package. This package type is through-hole mounted, robust, and suitable for high-power applications, offering good thermal performance and ease of heatsink attachment. It is commonly used in inverters, motor drives, and power supplies.

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