FM24W256-G

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FM24W256-G

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IC FRAM 256KBIT I2C 1MHZ 8SOIC

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Especificações

Atributo Valor
Package Bulk,Tube
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 256Kb (32K x 8)
MemoryInterface I²C
ClockFrequency 1 MHz
AccessTime 550 ns
Voltage-Supply 2.7V ~ 5.5V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Visão Geral

Description

The FM24W256-G is a non-volatile F-RAM (Ferroelectric Random Access Memory) chip developed by Cypress Semiconductor. It features a 256-Kbit memory capacity organized as 32,768 words of 8 bits each. This memory device is designed for high-performance applications that require frequent and fast read/write cycles, with a distinctive advantage over traditional EEPROMs due to its fast write speed, high endurance, and low power consumption.
The FM24W256-G operates over a wide voltage range from 2.7V to 3.6V and is compatible with the I2C interface, making it suitable for a variety of applications, including industrial control, medical devices, and consumer electronics. It supports up to 1 million write/read cycles, which is significantly higher than typical EEPROMs, and retains data for over 10 years at +85°C. The device is housed in an 8-pin SOIC package, facilitating easy integration into existing designs. Its robust data retention and fast access times make it ideal for applications requiring reliable and efficient data storage.

Equivalent

The FM24W256-G is a 256-Kbit non-volatile F-RAM chip. Equivalent products include:
1. Cypress CY15B256Q: 256-Kbit F-RAM with I2C interface.
2. Rohm BR24T256-W: 256-Kbit I2C EEPROM with similar characteristics.
3. Adesto Technologies AT24C256B: 256-Kbit I2C EEPROM, while not F-RAM, can be an alternative for certain applications.
Ensure compatibility in terms of electrical specifications and interface for your specific application needs.

Features

The FM24W256-G is a 256-Kbit ferroelectric random access memory (F-RAM) device, known for its high-performance characteristics. Key features include:
1. Non-Volatility: Retains data without power, combining the speed of RAM with the non-volatility of flash memory.
2. High Endurance: Capable of over 10 trillion read/write cycles, offering superior longevity compared to traditional EEPROM and flash.
3. Fast Writes: Supports write speeds comparable to RAM, eliminating the delays typically associated with EEPROM.
4. Low Power Consumption: Operates at low power, suitable for battery-operated devices.
5. I2C Interface: Supports standard I2C interface, allowing easy integration with various microcontrollers.
6. Wide Voltage Range: Operates between 2.7V and 3.6V, providing flexibility for different applications.
7. Data Retention: Offers data retention for over 151 years, ensuring long-term reliability.
8. RoHS Compliant: Meets environmental standards for lead-free and safe manufacturing.
These features make the FM24W256-G ideal for applications requiring reliable, high-speed, non-volatile memory.

Pinout

The FM24W256-G is a 256-Kbit non-volatile F-RAM memory device. It typically comes in an 8-pin package. The pin functions are generally as follows:
1. A0 - A14: Address pins used to select a memory location.
2. DQ0 - DQ7: Data bus for input/output.
3. /WP (Write Protect): Write protection input.
4. /CE (Chip Enable): Activates the device when low.
5. /WE (Write Enable): Enables write operations when low.
6. /OE (Output Enable): Enables output operations when low.
7. VDD: Power supply voltage.
8. VSS (Ground): Ground.
Please refer to the specific datasheet for detailed pin configurations and descriptions, as they can vary slightly depending on the package type and manufacturer.

Manufacturer

The FM24W256-G is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon is known for producing a wide range of semiconductor solutions, including microcontrollers, sensors, power semiconductors, and memory products such as the FM24W256-G, which is a type of ferroelectric random-access memory (FRAM). FRAM is known for its non-volatility, fast write speed, high endurance, and low power consumption, making it suitable for various applications in automotive, industrial, and consumer electronics sectors. Infineon Technologies focuses on providing innovative and reliable semiconductor solutions that enhance energy efficiency, mobility, and security in electronic products.

Application

The FM24W256-G is a non-volatile ferroelectric RAM (FRAM) chip offering fast read/write speeds and reliable data retention. Key application areas include:
1. Industrial Systems: Used in control systems for data logging and ensuring data integrity during power failures.
2. Automotive: Employed in infotainment systems and advanced driver-assistance systems (ADAS) for quick data access and storage.
3. Medical Devices: Utilized for patient data storage and device configuration settings in portable and implantable devices.
4. Consumer Electronics: Integrated into smart appliances and IoT devices for efficient data handling.
5. Telecommunications: Supports network routers and switches in managing large data transfers efficiently.
These applications benefit from the chip’s durability and low power consumption.

Package

The FM24W256-G is typically available in an 8-pin SOIC (Small Outline Integrated Circuit) package. This package type is commonly used for non-volatile F-RAM memory devices like the FM24W256-G, which is a 256Kb I2C F-RAM.

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